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公开(公告)号：US20200212532A1
公开(公告)日：2020-07-02
申请号：US16238421
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
Abstract: Describe is a resonator that uses ferroelectric (FE) material in a capacitive structure. The resonator includes a first plurality of metal lines extending in a first direction; an array of capacitors comprising ferroelectric material; a second plurality of metal lines extending in the first direction, wherein the array of capacitors is coupled between the first and second plurality of metal lines; and a circuitry to switch polarization of at least one capacitor of the array of capacitors. The switching of polarization regenerates acoustic waves. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using metal lines above and adjacent to the FE based capacitors.
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公开(公告)号：US20230238444A1
公开(公告)日：2023-07-27
申请号：US18130326
申请日：2023-04-03
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L27/088 , H01L29/78 , H03H9/17 , H01L29/423
CPC classification number: H01L29/516 , H01L27/0886 , H01L29/7851 , H03H9/17 , H01L29/78391 , H01L29/42356
Abstract: Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.
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公开(公告)号：US20200212193A1
公开(公告)日：2020-07-02
申请号：US16238419
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L27/088 , H01L29/423 , H03H9/17 , H01L29/78
Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.
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Patent Agency Ranking
公开(公告)号：US11637191B2
公开(公告)日：2023-04-25
申请号：US16238420
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L29/78 , H01L27/088 , H03H9/17 , H01L29/423
Abstract: Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.
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公开(公告)号：US20200212194A1
公开(公告)日：2020-07-02
申请号：US16238420
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L27/088 , H01L29/423 , H03H9/17 , H01L29/78
Abstract: Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.
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公开(公告)号：US12113117B2
公开(公告)日：2024-10-08
申请号：US18130326
申请日：2023-04-03
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L27/088 , H01L29/423 , H01L29/78 , H03H9/17
CPC classification number: H01L29/516 , H01L27/0886 , H01L29/42356 , H01L29/78391 , H01L29/7851 , H03H9/17
Abstract: Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.
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公开(公告)号：US11646356B2
公开(公告)日：2023-05-09
申请号：US16238419
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
IPC: H01L29/51 , H01L29/78 , H01L27/088 , H03H9/17 , H01L29/423
CPC classification number: H01L29/516 , H01L27/0886 , H01L29/42356 , H01L29/7851 , H01L29/78391 , H03H9/17
Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.
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公开(公告)号：US11605624B2
公开(公告)日：2023-03-14
申请号：US16238421
申请日：2019-01-02
Applicant: Intel Corporation
Inventor： Tanay Gosavi , Chia-ching Lin , Raseong Kim , Ashish Verma Penumatcha , Uygar Avci , Ian Young
Abstract: Describe is a resonator that uses ferroelectric (FE) material in a capacitive structure. The resonator includes a first plurality of metal lines extending in a first direction; an array of capacitors comprising ferroelectric material; a second plurality of metal lines extending in the first direction, wherein the array of capacitors is coupled between the first and second plurality of metal lines; and a circuitry to switch polarization of at least one capacitor of the array of capacitors. The switching of polarization regenerates acoustic waves. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using metal lines above and adjacent to the FE based capacitors.
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