MEMORY MODULE AND CONNECTOR FORM FACTOR TO REDUCE CROSSTALK

    公开(公告)号:US20210408704A1

    公开(公告)日:2021-12-30

    申请号:US17470552

    申请日:2021-09-09

    Abstract: Systems, apparatuses and methods may provide for a memory module that includes a dynamic random access memory (DRAM), a first plurality of contact pads positioned along a first side of the DRAM, a first plurality of L-shaped contacts, wherein each of the first plurality of L-shaped contacts is soldered to one of the first plurality of contact pads, a second plurality of contact pads positioned along a second side of the DRAM, and a second plurality of L-shaped contacts, wherein each of the second plurality of L-shaped contacts is soldered to one of the second plurality of contact pads.

    Device, system and method to mitigate signal noise in communications with a memory module

    公开(公告)号:US10729002B2

    公开(公告)日:2020-07-28

    申请号:US16516174

    申请日:2019-07-18

    Abstract: Techniques and mechanisms for mitigating signal deterioration in communications between two circuit boards. In an embodiment, a packaged device accommodates coupling to a first circuit board which, in turn, accommodates connection to a second circuit board. In one such embodiment, an amplifier circuit of the packaged device includes an amplifier circuit which comprises a variable resistor and an active circuit element coupled thereto. The device receives via one of the circuit boards a control signal and a voltage which configure the amplifier circuit to provide an impedance matching for communication between the circuit boards. In another embodiment, the device comprises multiple common gate amplifiers which are variously configurable each to provide a respective impedance matching for communications between a motherboard and a dual in-line memory module.

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