公开(公告)号：US11610971B2

公开(公告)日：2023-03-21

申请号：US16222976

申请日：2018-12-17

Applicant: Intel Corporation

Inventor： Sansaptak Dasgupta ,  Marko Radosavljevic ,  Han Wui Then ,  Nidhi Nidhi ,  Rahul Ramaswamy ,  Johann Rode ,  Paul Fischer ,  Walid Hafez

IPC: H01L29/205 ,  H01L29/10 ,  H01L29/778 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08 ,  H01L29/423 ,  H01L29/207

Abstract: An integrated circuit structure comprises a base layer that includes a channel region, wherein the base layer and the channel region include group III-V semiconductor material. A polarization layer stack is over the base layer, wherein the polarization layer stack comprises a buffer stack, an interlayer over the buffer stack, a polarization layer over the interlayer. A cap layer stack is over the polarization layer to reduce transistor access resistance.