公开(公告)号：US12302618B2

公开(公告)日：2025-05-13

申请号：US17458097

申请日：2021-08-26

Applicant: Intel Corporation

Inventor： Samuel James Bader ,  Pratik Koirala ,  Nicole K. Thomas ,  Han Wui Then ,  Marko Radosavljevic

IPC: H01L29/267 ,  H01L21/02 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H10D30/01 ,  H10D30/47 ,  H10D62/82 ,  H10D64/00

Abstract: An integrated circuit structure includes a substrate including silicon, the substrate having a top surface. A first trench is in the substrate, the first trench having a first width and a first height. A second trench is in the substrate, the second trench having a second width and a second height. The second width is greater than the first width, and the second height is greater than the first height. A first island is in the first trench, the first island including gallium and nitrogen and having first corner facets at least partially below the top surface of the substrate. A second island is in the second trench, the second island including gallium and nitrogen and having second corner facets at least partially below the top surface of the substrate.