公开(公告)号：US20250159953A1

公开(公告)日：2025-05-15

申请号：US18730464

申请日：2022-04-01

Applicant: Intel Corporation

Inventor： Tahir Ghani ,  Abhishek A. Sharma ,  Elliot Tan ,  Shem Odhiambo Ogadhoh ,  Wilfred Gomes ,  Anand S. Murthy ,  Swaminathan Sivakumar ,  Sagar Suthram

IPC: H10D62/10 ,  H01L23/522 ,  H01L23/528 ,  H10D30/00 ,  H10D30/47 ,  H10D30/62 ,  H10D84/01 ,  H10D84/83

Abstract: IC devices with angled transistors, and related assemblies and methods, are disclosed herein. A transistor is referred to as “angled” if a longitudinal axis of an elongated semiconductor structure (e.g., a fin or a nanoribbon) based on which the transistor is built is at an angle other than 0 degrees or 90 degrees with respect to edges of front or back faces of a support structure on/in which the transistor resides, e.g., at an angle between 10 degrees and 80 degrees with respect to at least one of such edges. Angled transistors provide a promising way to increasing densities of transistors on the limited real estate of semiconductor chips.

公开(公告)号：US11854787B2

公开(公告)日：2023-12-26

申请号：US17735006

申请日：2022-05-02

Applicant: Intel Corporation

Inventor： Richard E. Schenker ,  Robert L. Bristol ,  Kevin L. Lin ,  Florian Gstrein ,  James M. Blackwell ,  Marie Krysak ,  Manish Chandhok ,  Paul A. Nyhus ,  Charles H. Wallace ,  Curtis W. Ward ,  Swaminathan Sivakumar ,  Elliot N. Tan

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/53238 ,  H01L27/0886 ,  H01L29/7848

Abstract: Advanced lithography techniques including sub-10 nm pitch patterning and structures resulting therefrom are described. Self-assembled devices and their methods of fabrication are described.

公开(公告)号：US10910265B2

公开(公告)日：2021-02-02

申请号：US16801113

申请日：2020-02-25

Applicant: Intel Corporation

Inventor： Oleg Golonzka ,  Swaminathan Sivakumar ,  Charles H. Wallace ,  Tahir Ghani

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/66 ,  H01L21/28 ,  H01L23/535 ,  H01L29/06 ,  H01L21/32

Abstract: Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.

公开(公告)号：US12278204B2

公开(公告)日：2025-04-15

申请号：US17404870

申请日：2021-08-17

Applicant: Intel Corporation

Inventor： Charles H. Wallace ,  Hossam A. Abdallah ,  Elliot N. Tan ,  Swaminathan Sivakumar ,  Oleg Golonzka ,  Robert M. Bigwood

IPC: G03F7/16 ,  G03F1/36 ,  G03F1/50 ,  G03F1/70 ,  G03F7/00 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/263 ,  H01L21/306 ,  H01L21/308 ,  H01L23/00 ,  H01L27/02

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

公开(公告)号：US12218052B2

公开(公告)日：2025-02-04

申请号：US18384582

申请日：2023-10-27

Applicant: Intel Corporation

Inventor： Richard E. Schenker ,  Robert L Bristol ,  Kevin L. Lin ,  Florian Gstrein ,  James M. Blackwell ,  Marie Krysak ,  Manish Chandhok ,  Paul A Nyhus ,  Charles H. Wallace ,  Curtis W. Ward ,  Swaminathan Sivakumar ,  Elliot N. Tan

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L27/088 ,  H01L29/78

Abstract: Advanced lithography techniques including sub-10 nm pitch patterning and structures resulting therefrom are described. Self-assembled devices and their methods of fabrication are described.

公开(公告)号：US12211925B2

公开(公告)日：2025-01-28

申请号：US18219986

申请日：2023-07-10

Applicant: Intel Corporation

Inventor： Leonard P. Guler ,  Biswajeet Guha ,  Tahir Ghani ,  Swaminathan Sivakumar

IPC: H01L29/00 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Gate-all-around integrated circuit structures having oxide sub-fins, and methods of fabricating gate-all-around integrated circuit structures having oxide sub-fins, are described. For example, an integrated circuit structure includes an oxide sub-fin structure having a top and sidewalls. An oxidation catalyst layer is on the top and sidewalls of the oxide sub-fin structure. A vertical arrangement of nanowires is above the oxide sub-fin structure. A gate stack is surrounding the vertical arrangement of nanowires and on at least the portion of the oxidation catalyst layer on the top of the oxide sub-fin structure.

公开(公告)号：US11972979B2

公开(公告)日：2024-04-30

申请号：US18207047

申请日：2023-06-07

Applicant: Intel Corporation

Inventor： Leonard P. Guler ,  Michael Harper ,  Suzanne S. Rich ,  Charles H. Wallace ,  Curtis Ward ,  Richard E. Schenker ,  Paul Nyhus ,  Mohit K. Haran ,  Reken Patel ,  Swaminathan Sivakumar

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/76897 ,  H01L21/0337 ,  H01L21/823412 ,  H01L21/823475

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a first interlayer dielectric (ILD), a plurality of source/drain (S/D) contacts in the first ILD, a plurality of gate contacts in the first ILD, wherein the gate contacts and the S/D contacts are arranged in an alternating pattern, and wherein top surfaces of the gate contacts are below top surfaces of the S/D contacts so that a channel defined by sidewall surfaces of the first ILD is positioned over each of the gate contacts, mask layer partially filling a first channel over a first gate contact, and a fill metal filling a second channel over a second gate contact that is adjacent to the first gate contact.

公开(公告)号：US11756829B2

公开(公告)日：2023-09-12

申请号：US17961400

申请日：2022-10-06

Applicant: Intel Corporation

Inventor： Oleg Golonzka ,  Swaminathan Sivakumar ,  Charles H. Wallace ,  Tahir Ghani

IPC: H01L21/768 ,  H01L21/306 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/66 ,  H01L21/28 ,  H01L23/535 ,  H01L29/06 ,  H01L21/32

CPC classification number: H01L21/76897 ,  H01L21/28008 ,  H01L21/30625 ,  H01L21/76805 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/535 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/66545 ,  H01L21/32

Abstract: Gate aligned contacts and methods of forming gate aligned contacts are described. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures above an active region formed above a substrate. The gate structures each include a gate dielectric layer, a gate electrode, and sidewall spacers. A plurality of contact plugs is formed, each contact plug formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts is formed, each contact formed directly between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. The plurality of contacts and the plurality of gate structures are formed subsequent to forming the plurality of contact plugs.

公开(公告)号：US11742410B2

公开(公告)日：2023-08-29

申请号：US16238783

申请日：2019-01-03

Applicant: Intel Corporation

Inventor： Leonard P. Guler ,  Biswajeet Guha ,  Tahir Ghani ,  Swaminathan Sivakumar

IPC: H01L29/00 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L29/66545 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/30604 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/78696

Abstract: Gate-all-around integrated circuit structures having oxide sub-fins, and methods of fabricating gate-all-around integrated circuit structures having oxide sub-fins, are described. For example, an integrated circuit structure includes an oxide sub-fin structure having a top and sidewalls. An oxidation catalyst layer is on the top and sidewalls of the oxide sub-fin structure. A vertical arrangement of nanowires is above the oxide sub-fin structure. A gate stack is surrounding the vertical arrangement of nanowires and on at least the portion of the oxidation catalyst layer on the top of the oxide sub-fin structure.

公开(公告)号：US11538937B2

公开(公告)日：2022-12-27

申请号：US16240166

申请日：2019-01-04

Applicant: Intel Corporation

Inventor： Leonard Guler ,  Nick Lindert ,  Biswajeet Guha ,  Swaminathan Sivakumar ,  Tahir Ghani

IPC: H01L29/78 ,  H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02

Abstract: Fin trim plug structures for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls. The fin has a trench separating a first fin portion and a second fin portion. A first gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the first fin portion. A second gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the second fin portion. An isolation structure is in the trench of the fin, the isolation structure between the first gate structure and the second gate structure. The isolation structure includes a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer.