公开(公告)号：US10553538B2

公开(公告)日：2020-02-04

申请号：US16152221

申请日：2018-10-04

Applicant: Intel IP Corporation

Inventor： Klaus Jürgen Reingruber ,  Sven Albers ,  Christian Georg Geissler ,  Georg Seidemann ,  Bernd Waidhas ,  Thomas Wagner ,  Marc Dittes

IPC: H01L23/538 ,  H01L23/528 ,  H01L23/498 ,  H01L23/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/48 ,  C25D5/54 ,  C25D7/12 ,  H01L23/522 ,  H05K1/02 ,  H05K1/11

Abstract: Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.

公开(公告)号：US10115668B2

公开(公告)日：2018-10-30

申请号：US14970355

申请日：2015-12-15

Applicant: Intel IP Corporation

Inventor： Klaus Jürgen Reingruber ,  Sven Albers ,  Christian Georg Geissler ,  Georg Seidemann ,  Bernd Waidhas ,  Thomas Wagner ,  Marc Dittes

IPC: H01L23/522 ,  H01L23/528 ,  C25D5/02 ,  C25D5/10 ,  C25D5/48 ,  C25D5/54 ,  C25D7/12 ,  H01L23/00 ,  H05K1/02 ,  H05K1/11 ,  H01L23/498

Abstract: Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.