公开(公告)号：US08691670B2

公开(公告)日：2014-04-08

申请号：US13717899

申请日：2012-12-18

Applicant: Intersil Americas Inc.

Inventor： Rick Carlton Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02107

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide layer of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract translation: 一种半导体器件的方法和结构，所述器件包括处理晶片，直接形成在所述手柄晶片前侧的金刚石层，以及直接形成在所述手柄晶片的背面上的厚氧化物层，所述氧化物层 抵消金刚石层的拉伸应力的厚度。 氮化物层形成在金刚石层和厚氧化物层的外表面上，并且在氮化物层的外表面上形成多晶硅。 器件晶片被结合到处理晶片以形成半导体器件。

公开(公告)号：US20130157416A1

公开(公告)日：2013-06-20

申请号：US13717899

申请日：2012-12-18

Applicant: INTERSIL AMERICAS INC.

Inventor： Rick Carlton Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

IPC: H01L21/02

CPC classification number: H01L21/02107

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract translation: 一种用于半导体器件的方法和结构，所述器件包括处理晶片，直接形成在所述手柄晶片前侧上的金刚石层以及直接形成在所述手柄晶片的背面上的厚氧化物层，所述氧化物 抵抗金刚石层的拉伸应力的厚度。 在金刚石层和厚氧化物层的外表面上形成氮化物层，并且在氮化物层的外表面上形成多晶硅。 器件晶片被结合到处理晶片以形成半导体器件。