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公开(公告)号:US09349669B2
公开(公告)日:2016-05-24
申请号:US14643264
申请日:2015-03-10
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Kishor V. Desai , Huailiang Wei , Craig Mitchell , Belgacem Haba
IPC: H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/34 , H01L21/768 , H01L23/00 , H01L23/14 , H01L23/498
CPC classification number: H01L23/34 , H01L21/76841 , H01L21/76883 , H01L21/76885 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/05558 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/1134 , H01L2224/1147 , H01L2224/13082 , H01L2224/13083 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13565 , H01L2224/32105 , H01L2924/00011 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2224/81805
Abstract: A microelectronic component with circuitry includes a substrate (possibly semiconductor) having an opening in a top surface. The circuitry includes a conductive via (possibly metal) in the opening. The opening has a first sidewall of a first material, and the conductive via has a second sidewall of a second material (possibly metal). At least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location. Between the meeting location and the top surface of the substrate, the first and second sidewalls are separated by a third material (possibly foam) which is a dielectric different from the first material. The third material lowers thermal stress in case of thermal expansion compared to a structure in which the third material were replaced with the second material.
Abstract translation: 具有电路的微电子部件包括在顶表面具有开口的衬底(可能的半导体)。 电路包括开口中的导电通孔(可能是金属)。 开口具有第一材料的第一侧壁,并且导电通孔具有第二材料(可能是金属)的第二侧壁。 至少在开口的一侧,第一和第二侧壁在基板的顶表面处彼此间隔开,但是第一和第二侧壁在会议位置处在基板的顶表面下面相交。 在会议位置和基板的顶表面之间,第一和第二侧壁由不同于第一材料的电介质的第三材料(可能是泡沫)隔开。 第三种材料与第三种材料被第二种材料替换的结构相比,在热膨胀的情况下降低了热应力。
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公开(公告)号:US20180295718A1
公开(公告)日:2018-10-11
申请号:US16007410
申请日:2018-06-13
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Craig Mitchell , Belgacem Haba , Ilyas Mohammed
IPC: H05K1/02 , H01L23/498 , H01R12/71 , H05K3/42 , H05K1/11
CPC classification number: H05K1/0271 , H01L23/49827 , H01L2924/0002 , H01R12/714 , H05K1/114 , H05K1/115 , H05K3/42 , H05K2201/09645 , H05K2201/10378 , H05K2203/0242 , H05K2203/025 , Y10T29/49165 , H01L2924/00
Abstract: A method for making an interconnection component includes forming a mask layer that covers a first opening in a sheet-like element that includes a first opening extending between the first and second surfaces of the element. The element consists essentially of a material having a coefficient of thermal expansion of less than 10 parts per million per degree Celsius. The first opening includes a central opening and a plurality of peripheral openings open to the central opening that extends in an axial direction of the central opening. A conductive seed layer can cover an interior surface of the first opening. The method further includes forming a first mask opening in at least a portion of the mask layer overlying the first opening to expose portions of the conductive seed layer within the peripheral openings; and forming electrical conductors on exposed portions of the conductive seed layer.
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公开(公告)号:US20180261556A1
公开(公告)日:2018-09-13
申请号:US15977905
申请日:2018-05-11
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Sangil Lee , Craig Mitchell , Gabriel Z. Guevara , Javier A. Delacruz
IPC: H01L23/00 , H01L21/48 , H01L23/498 , B23K1/00
CPC classification number: H01L23/562 , B23K1/0008 , H01L21/4853 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/5383 , H01L23/5389 , H01L2224/16225 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2924/00012
Abstract: Representative implementations of devices and techniques provide reinforcement for a carrier or a package. A reinforcement layer is added to a surface of the carrier, often a bottom surface of the carrier that is generally under-utilized except for placement of terminal connections. The reinforcement layer adds structural support to the carrier or package, which can be very thin otherwise. In various embodiments, the addition of the reinforcement layer to the carrier or package reduces warpage of the carrier or package.
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公开(公告)号:US20150187673A1
公开(公告)日:2015-07-02
申请号:US14643264
申请日:2015-03-10
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Kishor V. Desai , Huailiang Wei , Craig Mitchell , Belgacem Haba
IPC: H01L23/34 , H01L21/768
CPC classification number: H01L23/34 , H01L21/76841 , H01L21/76883 , H01L21/76885 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/05558 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/1134 , H01L2224/1147 , H01L2224/13082 , H01L2224/13083 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13565 , H01L2224/32105 , H01L2924/00011 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2224/81805
Abstract: A microelectronic component with circuitry includes a substrate (possibly semiconductor) having an opening in a top surface. The circuitry includes a conductive via (possibly metal) in the opening. The opening has a first sidewall of a first material, and the conductive via has a second sidewall of a second material (possibly metal). At least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location. Between the meeting location and the top surface of the substrate, the first and second sidewalls are separated by a third material (possibly foam) which is a dielectric different from the first material. The third material lowers thermal stress in case of thermal expansion compared to a structure in which the third material were replaced with the second material.
Abstract translation: 具有电路的微电子部件包括在顶表面具有开口的衬底(可能的半导体)。 电路包括开口中的导电通孔(可能是金属)。 开口具有第一材料的第一侧壁,并且导电通孔具有第二材料(可能是金属)的第二侧壁。 至少在开口的一侧,第一和第二侧壁在基板的顶表面处彼此间隔开,但是第一和第二侧壁在会议位置处在基板的顶表面下面相交。 在会议位置和基板的顶表面之间,第一和第二侧壁由不同于第一材料的电介质的第三材料(可能是泡沫)隔开。 第三种材料与第三种材料被第二种材料替换的结构相比,在热膨胀的情况下降低了热应力。
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公开(公告)号:US10015881B2
公开(公告)日:2018-07-03
申请号:US14573461
申请日:2014-12-17
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Craig Mitchell , Belgacem Haba , Ilyas Mohammed
CPC classification number: H05K1/0271 , H01L23/49827 , H01L2924/0002 , H01R12/714 , H05K1/114 , H05K1/115 , H05K3/42 , H05K2201/09645 , H05K2201/10378 , H05K2203/0242 , H05K2203/025 , Y10T29/49165 , H01L2924/00
Abstract: A method is disclosed for making an interconnection component. The steps include forming a mask layer covering a first opening in a sheet-like element that has first and second opposed surfaces; forming a plurality of mask openings in the mask layer, wherein the first opening and a portion of the first surface are partly aligned with each mask opening; and forming electrical conductors on spaced apart portions of the first surface and on spaced apart portions of the interior surface within the first opening which are exposed by the mask openings. The element may consist essentially of a material having a coefficient of thermal expansion of less than 10 parts per million per degree Celsius. Each conductor may extend along an axial direction of the first opening and the first conductors may be fully separated from one another within the first opening.
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公开(公告)号:US10813214B2
公开(公告)日:2020-10-20
申请号:US16007410
申请日:2018-06-13
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Craig Mitchell , Belgacem Haba , Ilyas Mohammed
Abstract: A method for making an interconnection component includes forming a mask layer that covers a first opening in a sheet-like element that includes a first opening extending between the first and second surfaces of the element. The element consists essentially of a material having a coefficient of thermal expansion of less than 10 parts per million per degree Celsius. The first opening includes a central opening and a plurality of peripheral openings open to the central opening that extends in an axial direction of the central opening. A conductive seed layer can cover an interior surface of the first opening. The method further includes forming a first mask opening in at least a portion of the mask layer overlying the first opening to expose portions of the conductive seed layer within the peripheral openings; and forming electrical conductors on exposed portions of the conductive seed layer.
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公开(公告)号:US10483217B2
公开(公告)日:2019-11-19
申请号:US15977905
申请日:2018-05-11
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Sangil Lee , Craig Mitchell , Gabriel Z. Guevara , Javier A. Delacruz
IPC: H01L21/48 , H01L23/498 , H01L23/00 , B23K1/00 , H01L23/538 , H01L23/31
Abstract: Representative implementations of devices and techniques provide reinforcement for a carrier or a package. A reinforcement layer is added to a surface of the carrier, often a bottom surface of the carrier that is generally under-utilized except for placement of terminal connections. The reinforcement layer adds structural support to the carrier or package, which can be very thin otherwise. In various embodiments, the addition of the reinforcement layer to the carrier or package reduces warpage of the carrier or package.
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公开(公告)号:US20180040572A1
公开(公告)日:2018-02-08
申请号:US15670382
申请日:2017-08-07
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Sangil Lee , Craig Mitchell , Gabriel Z. Guevara , Javier A. Delacruz
IPC: H01L23/00 , H01L23/498 , B23K1/00 , H01L21/48
CPC classification number: H01L23/562 , B23K1/0008 , H01L21/4853 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/5383 , H01L23/5389 , H01L2224/16225 , H01L2924/15311 , H01L2924/181 , H01L2924/00012
Abstract: Representative implementations of devices and techniques provide reinforcement for a carrier or a package. A reinforcement layer is added to a surface of the carrier, often a bottom surface of the carrier that is generally under-utilized except for placement of terminal connections. The reinforcement layer adds structural support to the carrier or package, which can be very thin otherwise. In various embodiments, the addition of the reinforcement layer to the carrier or package reduces warpage of the carrier or package.
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9.
公开(公告)号:US20150101858A1
公开(公告)日:2015-04-16
申请号:US14573461
申请日:2014-12-17
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Craig Mitchell , Belgacem Haba , Ilyas Mohammed
CPC classification number: H05K1/0271 , H01L23/49827 , H01L2924/0002 , H01R12/714 , H05K1/114 , H05K1/115 , H05K3/42 , H05K2201/09645 , H05K2201/10378 , H05K2203/0242 , H05K2203/025 , Y10T29/49165 , H01L2924/00
Abstract: A method is disclosed for making an interconnection component. The steps include forming a mask layer covering a first opening in a sheet-like element that has first and second opposed surfaces; forming a plurality of mask openings in the mask layer, wherein the first opening and a portion of the first surface are partly aligned with each mask opening; and forming electrical conductors on spaced apart portions of the first surface and on spaced apart portions of the interior surface within the first opening which are exposed by the mask openings. The element may consist essentially of a material having a coefficient of thermal expansion of less than 10 parts per million per degree Celsius. Each conductor may extend along an axial direction of the first opening and the first conductors may be fully separated from one another within the first opening.
Abstract translation: 公开了一种制造互连部件的方法。 所述步骤包括在具有第一和第二相对表面的片状元件中形成覆盖第一开口的掩模层; 在所述掩模层中形成多个掩模开口,其中所述第一开口和所述第一表面的一部分与每个掩模开口部分对准; 以及在所述第一开口中的所述第一表面的间隔开的部分和所述第一开口内的所述内表面的间隔开的部分上形成电导体,所述部分被所述掩模开口暴露。 元件可以基本上由热膨胀系数小于10ppm /℃的材料组成。 每个导体可以沿着第一开口的轴向方向延伸,并且第一导体可以在第一开口内彼此完全分离。
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公开(公告)号:US09000600B2
公开(公告)日:2015-04-07
申请号:US14204860
申请日:2014-03-11
Applicant: Invensas Corporation
Inventor: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Kishor V. Desai , Huailiang Wei , Craig Mitchell , Belgacem Haba
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L21/768 , H01L23/00 , H01L23/14 , H01L23/498
CPC classification number: H01L23/34 , H01L21/76841 , H01L21/76883 , H01L21/76885 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/05558 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/1134 , H01L2224/1147 , H01L2224/13082 , H01L2224/13083 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13565 , H01L2224/32105 , H01L2924/00011 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2224/81805
Abstract: A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface. A dielectric material can be exposed at the inner wall. The conductive via can define a relief channel within the opening adjacent the first surface. The relief channel can have an edge within a first distance from the inner wall in a direction of a plane parallel to and within five microns below the first surface, the first distance being the lesser of one micron and five percent of a maximum width of the opening in the plane. The edge can extend along the inner wall to span at least five percent of a circumference of the inner wall.
Abstract translation: 部件可以包括在基板的开口内延伸的基板和导电通孔。 基底可以具有第一和第二相对表面。 开口可以从第一表面延伸到第二表面,并且可以具有远离第一表面延伸的内壁。 电介质材料可以在内壁暴露。 导电通孔可以在邻近第一表面的开口内限定释放通道。 释放通道可以具有在与第一表面平行且在五微米以内的平面的方向上离内壁的第一距离内的边缘,第一距离是最小宽度的一微米和百分之五的最小宽度 在飞机上开了 边缘可以沿着内壁延伸以跨越内壁的圆周的至少百分之五。
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