公开(公告)号：US11495579B2

公开(公告)日：2022-11-08

申请号：US17074401

申请日：2020-10-19

Applicant: Invensas LLC

Inventor： Belgacem Haba ,  Arkalgud R. Sitaram

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L21/311 ,  H01L21/02 ,  H01L23/64

Abstract: Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.

公开(公告)号：US20230040454A1

公开(公告)日：2023-02-09

申请号：US17959585

申请日：2022-10-04

Applicant: Invensas LLC

Inventor： Belgacem Haba ,  Arkalgud R. Sitaram

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L21/311 ,  H01L21/02 ,  H01L23/64

Abstract: Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.