Thin-film transistor substrate and luminescent device

    公开(公告)号:US11018160B2

    公开(公告)日:2021-05-25

    申请号:US16434425

    申请日:2019-06-07

    Applicant: JOLED INC.

    Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

    Display unit
    2.
    发明授权

    公开(公告)号:US11063109B2

    公开(公告)日:2021-07-13

    申请号:US16830289

    申请日:2020-03-26

    Applicant: JOLED INC.

    Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

    Display unit
    4.
    发明授权

    公开(公告)号:US11217650B2

    公开(公告)日:2022-01-04

    申请号:US16209882

    申请日:2018-12-04

    Applicant: JOLED INC.

    Abstract: A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.

    Display unit and light emission unit

    公开(公告)号:US11217641B2

    公开(公告)日:2022-01-04

    申请号:US16209968

    申请日:2018-12-05

    Applicant: JOLED INC.

    Abstract: A display unit includes multiple pixels, a first electrode, a partition wall, a light emission layer, and a second electrode. The multiple pixels each have a light emission region and a non-light emission region along a first direction. The first electrode is provided in the light emission region in each of the multiple pixels. The partition wall is provided between each two of the pixels that are adjacent to each other in a second direction. The second direction intersects the first direction. The light emission layer covers the first electrode and is provided in the light emission region and the non-light emission region in a continuous manner. The second electrode faces the first electrode across the light emission layer.

    Semiconductor device and display including wiring line having protective metal film

    公开(公告)号:US11127762B2

    公开(公告)日:2021-09-21

    申请号:US16518386

    申请日:2019-07-22

    Applicant: JOLED INC.

    Abstract: A semiconductor device includes a semiconductor film, a semiconductor auxiliary film, a wiring line, a first metal film, and an interlayer insulating film. The semiconductor film includes a channel region and a low-resistance region. The semiconductor film includes indium and oxygen. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film and reduces the electric resistance of the semiconductor film. The wiring line is electrically coupled to the low-resistance region of the semiconductor film. The first metal film covers the wiring line and has a higher standard electrode potential than the indium. The interlayer insulating film covers the semiconductor film with the first metal film interposed therebetween. The interlayer insulating film has a first hole and a second hole. The first hole is provided at a position opposed to the low-resistance region of the semiconductor film. The second hole reaches the first metal film.

    Semiconductor device
    8.
    发明授权

    公开(公告)号:US10431603B2

    公开(公告)日:2019-10-01

    申请号:US15863009

    申请日:2018-01-05

    Applicant: JOLED INC.

    Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.

    Semiconductor device and display unit

    公开(公告)号:US11081591B2

    公开(公告)日:2021-08-03

    申请号:US16736814

    申请日:2020-01-08

    Applicant: JOLED INC.

    Inventor: Yasuhiro Terai

    Abstract: A semiconductor device includes a substrate, a first semiconductor auxiliary film, a semiconductor film, a gate insulating film, and a gate electrode. The first semiconductor auxiliary film is provided in a selective region on the substrate. The semiconductor film includes an oxide semiconductor material, and has a low-resistive region in contact with the first semiconductor auxiliary film and a channel region provided in a portion different from the low-resistive region. The gate insulating film covers the semiconductor film from the channel region to at least part of the low-resistive region. The gate electrode is opposed to the channel region of the semiconductor film via the gate insulating film.

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