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公开(公告)号:US11018160B2
公开(公告)日:2021-05-25
申请号:US16434425
申请日:2019-06-07
Applicant: JOLED INC.
Inventor: Ryosuke Ebihara , Yasuhiro Terai , Atsuhito Murai
Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.
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公开(公告)号:US11063109B2
公开(公告)日:2021-07-13
申请号:US16830289
申请日:2020-03-26
Applicant: JOLED INC.
Inventor: Atsuhito Murai , Yasuhiro Terai , Takashi Maruyama , Yoshihiro Oshima , Motohiro Toyota , Ryosuke Ebihara , Yasunobu Hiromasu
IPC: H01L27/32 , H01L51/52 , H01L29/417 , H01L29/423 , H01L29/786 , H01L27/12
Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.
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公开(公告)号:US09178074B2
公开(公告)日:2015-11-03
申请号:US14202852
申请日:2014-03-10
Applicant: Joled Inc.
Inventor: Yasuhiro Terai , Takahide Ishii , Ayumu Sato
IPC: H01L27/00 , H01L29/786 , H01L27/12 , H01L27/32 , H01L27/13
CPC classification number: H01L29/7869 , H01L27/1214 , H01L27/1225 , H01L27/1255 , H01L27/13 , H01L27/3244 , H01L27/3262 , H01L27/3265
Abstract: Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.
Abstract translation: 提供一种半导体器件,其包括:晶体管; 氧化物半导体膜; 与氧化物半导体膜电连接的第一导电膜; 以及设置在第一导电膜和氧化物半导体膜之间的第一绝缘膜。
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公开(公告)号:US11217650B2
公开(公告)日:2022-01-04
申请号:US16209882
申请日:2018-12-04
Applicant: JOLED INC.
Inventor: Yasuhiro Terai , Yasuharu Shinokawa , Jiro Yamada , Atsuhito Murai , Masahiko Kondo , Noriteru Maeda
Abstract: A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.
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公开(公告)号:US11217641B2
公开(公告)日:2022-01-04
申请号:US16209968
申请日:2018-12-05
Applicant: JOLED INC.
Inventor: Atsuhito Murai , Jiro Yamada , Yasuhiro Terai , Masahiko Kondo , Noriteru Maeda
Abstract: A display unit includes multiple pixels, a first electrode, a partition wall, a light emission layer, and a second electrode. The multiple pixels each have a light emission region and a non-light emission region along a first direction. The first electrode is provided in the light emission region in each of the multiple pixels. The partition wall is provided between each two of the pixels that are adjacent to each other in a second direction. The second direction intersects the first direction. The light emission layer covers the first electrode and is provided in the light emission region and the non-light emission region in a continuous manner. The second electrode faces the first electrode across the light emission layer.
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公开(公告)号:US11127762B2
公开(公告)日:2021-09-21
申请号:US16518386
申请日:2019-07-22
Applicant: JOLED INC.
Inventor: Eri Matsuo , Yasuhiro Terai
IPC: H01L27/12 , H01L29/786 , H01L29/66
Abstract: A semiconductor device includes a semiconductor film, a semiconductor auxiliary film, a wiring line, a first metal film, and an interlayer insulating film. The semiconductor film includes a channel region and a low-resistance region. The semiconductor film includes indium and oxygen. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film and reduces the electric resistance of the semiconductor film. The wiring line is electrically coupled to the low-resistance region of the semiconductor film. The first metal film covers the wiring line and has a higher standard electrode potential than the indium. The interlayer insulating film covers the semiconductor film with the first metal film interposed therebetween. The interlayer insulating film has a first hole and a second hole. The first hole is provided at a position opposed to the low-resistance region of the semiconductor film. The second hole reaches the first metal film.
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公开(公告)号:US10546538B2
公开(公告)日:2020-01-28
申请号:US16112771
申请日:2018-08-27
Applicant: JOLED INC.
Inventor: Atsuhito Murai , Jiro Yamada , Yasuhiro Terai , Masahiko Kondo , Noriteru Maeda
IPC: G09G3/3266 , G09G3/36 , G02F1/1362 , G09G3/20 , H05K1/18 , H01L27/12
Abstract: A display apparatus includes a display panel and a driving circuit. The display panel includes signal lines extending in a column direction, scanning lines extending in a row direction, and lead-out lines extending in the column direction. Each of the lead-out lines intersects with corresponding one of the scanning lines at an intersection and is electrically coupled to the corresponding one of the scanning lines at a node. The node is disposed at the intersection or in a region surrounding the intersection. The driving circuit supplies corresponding one of the signal lines with a signal pulse corresponding to an image signal, and supplies corresponding one of the lead-out lines with a selection pulse having a peak value based on a distance from one end of the corresponding one of the lead-out lines to the corresponding node, after increasing the peak value with an increase in the distance.
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公开(公告)号:US10431603B2
公开(公告)日:2019-10-01
申请号:US15863009
申请日:2018-01-05
Applicant: JOLED INC.
Inventor: Hiroshi Hayashi , Tokuaki Kuniyoshi , Yasuhiro Terai , Eri Matsuo , Toshiaki Yoshitani , Naoki Asano
IPC: H01L27/12 , H01L29/786 , H01L21/027 , H01L21/768 , H01L29/66 , H01L29/417
Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.
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公开(公告)号:US11678539B2
公开(公告)日:2023-06-13
申请号:US17534474
申请日:2021-11-24
Applicant: JOLED INC.
Inventor: Yasuhiro Terai , Yasuharu Shinokawa , Jiro Yamada , Atsuhito Murai , Masahiko Kondo , Noriteru Maeda
IPC: H10K59/131 , H10K50/828 , H10K50/824 , H10K50/86 , H01L27/12 , H01L27/32 , H01L51/52 , H10K50/818 , H10K102/00
CPC classification number: H01L27/3276 , H01L27/124 , H01L27/322 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5284 , H01L2251/5315
Abstract: A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.
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公开(公告)号:US11081591B2
公开(公告)日:2021-08-03
申请号:US16736814
申请日:2020-01-08
Applicant: JOLED INC.
Inventor: Yasuhiro Terai
IPC: H01L29/786 , H01L27/12 , H01L21/02 , G02F1/1362 , H01L29/12
Abstract: A semiconductor device includes a substrate, a first semiconductor auxiliary film, a semiconductor film, a gate insulating film, and a gate electrode. The first semiconductor auxiliary film is provided in a selective region on the substrate. The semiconductor film includes an oxide semiconductor material, and has a low-resistive region in contact with the first semiconductor auxiliary film and a channel region provided in a portion different from the low-resistive region. The gate insulating film covers the semiconductor film from the channel region to at least part of the low-resistive region. The gate electrode is opposed to the channel region of the semiconductor film via the gate insulating film.
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