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    METHOD OF ENCOURAGING GROWTH AND REGROWTH OF HAIR IN HUMAN MALES TECHNICAL AREA
    1.
    发明申请
    METHOD OF ENCOURAGING GROWTH AND REGROWTH OF HAIR IN HUMAN MALES TECHNICAL AREA 有权

    公开(公告)号：US20230061150A1

    公开(公告)日：2023-03-02

    申请号：US17803532

    申请日：2022-08-15

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: A61K8/49 ,  A61Q7/00 ,  A61P17/14 ,  A61K8/92 ,  A61N2/02

    Abstract: Methodology for encouraging hair growth in male humans, and more particularly to methodology which involves application of electromagnetic radiation, mechanical vibrations, along with applications of combined minoxidil, mint oil, (preferably menthol containing essential peppermint oil), ginger oil, lavender oil, castor bean oil, jojoba oil; melaleuca oil, cumin oil, D-alpha tocopherol (vitamin E) infused oil, biotin infused oil and a single selection, or dry mixture and/or liquid “tea” formed from selections from the group consisting of powdered saw palmetto; powdered horsetail; powdered ginger; powdered stinging nettles; powdered horny goat weed; powdered pueraria lobate; powdered Tribulus terrestris; powdered ashwagandha; powdered capsicum; powdered habenero; powdered green tea; powdered sage; powdered gingko biloba; powdered myrrh; powdered alpha-hydroxy; powdered Aloe vera; powdered wheat protein; powdered wheat starch; powdered casein, powdered keratin, powdered folic acid; powdered fenugreek seed and powdered biotin powdered ginseng Root; powdered vetiver grass; powdered caffeine; powdered Co-enzyme Q; powdered folate; powdered gotukola leaf; powdered milk thistle; powdered African pygeum; powdered stinging nettles; powdered gingko biloba; powdered myrrh; powdered alpha-hydroxy; powdered caffeine; powdered niacinamide (NAD) and/or niacin; and powdered Nigella sativa; powdered Eclipta alba; powdered Centella asiatica; powdered Phyllanthus emblica in water and alcohol, or an oil.

    Lamp
    3.
    外观设计
    Lamp 有权

    公开(公告)号：USD674519S1

    公开(公告)日：2013-01-15

    申请号：US29421074

    申请日：2012-05-16

    Applicant: James D. Welch

    Designer： James D. Welch

    Lamp
    4.
    外观设计
    Lamp 有权

    公开(公告)号：USD661002S1

    公开(公告)日：2012-05-29

    申请号：US29373042

    申请日：2011-02-23

    Applicant: James D. Welch

    Designer： James D. Welch

    Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
    7.
    发明授权
    Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems 失效
    相当于CMOS的单一器件的偏置，工作和寄生电流限制等半导体系统

    公开(公告)号：US06624493B1

    公开(公告)日：2003-09-23

    申请号：US09716046

    申请日：2000-11-20

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: H01L27095

    CPC classification number: H01L27/0727 ,  H01L21/823814 ,  H01L27/0629 ,  H01L27/092 ,  H01L27/095 ,  H01L29/7839

    Abstract: Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

    Abstract translation: 公开了包括正在整流半导体是N或P型的至少一个结的半导体器件，通过存在施加的栅极电压场感应载流子，其基本上本质上，基本均匀地同时含有N型和P型金相 基本相同的掺杂浓度的掺杂剂，基本上均匀地同时含有不同掺杂水平的N型和P型冶金掺杂剂，并且含有单一的冶金掺杂型及其功能组合。 特别地，公开了具有类似于可以作为调制器操作的常规多器件CMOS系统的操作特性的反相和非反相栅极电压通道感应的半导体单器件，非锁存SCR以及利用 与N型和P型半导体形成整流结的材料，无论是金属还是场诱导。

    Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use
    9.
    发明授权
    Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use 失效
    利用在N型和P型掺杂区中形成整流结的材料的半导体系统，无论是冶金还是场诱导，以及使用方法

    公开(公告)号：US06091128A

    公开(公告)日：2000-07-18

    申请号：US33695

    申请日：1998-03-03

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: H01L27/07 ,  H01L27/092 ,  H01L27/095 ,  H01L29/47

    CPC classification number: H01L27/095 ,  H01L27/0727 ,  H01L27/092

    Abstract: Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

    Abstract translation: 公开了半导体系统，例如利用Schotky势垒和/或扩散结技术的集成电路，该半导体系统包括在冶金和/或场诱导的N型和P型掺杂区域中形成整流结的材料，以及 他们的使用。 公开了具有类似于多器件CMOS系统的工作特性的肖特基势垒反相和非反相栅极电压通道感应的半导体单器件，并且其可以作为调制器，由其形成的N和P沟道MOSFET和CMOS以及（MOS）栅极 电压控制整流方向和栅极电压控制开关器件，以及使用这种材料阻止寄生电流流动通路。 还提出了具有类似于多器件CMOS系统的工作特性的反相和非反相栅极电压通道感应的半导体单个器件的简单示范五掩模制造程序。

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