公开(公告)号：US10396187B2

公开(公告)日：2019-08-27

申请号：US15880673

申请日：2018-01-26

Applicant: Japan Display Inc.

Inventor： Toshinari Sasaki ,  Masahiro Watabe ,  Masayoshi Fuchi ,  Isao Suzumura ,  Marina Shiokawa

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786 ,  H01L21/477

Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.

公开(公告)号：US11935967B2

公开(公告)日：2024-03-19

申请号：US17393452

申请日：2021-08-04

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/12 ,  H01L29/423 ,  G02F1/1343 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/7869 ,  G02F1/134363 ,  G02F1/1368 ,  G02F1/13685 ,  H10K59/1213

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US20190198533A1

公开(公告)日：2019-06-27

申请号：US16286146

申请日：2019-02-26

Applicant: Japan Display Inc.

Inventor： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/1237 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2201/501 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US10290657B2

公开(公告)日：2019-05-14

申请号：US15867847

申请日：2018-01-11

Applicant: Japan Display Inc.

Inventor： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US20180308987A1

公开(公告)日：2018-10-25

申请号：US15937331

申请日：2018-03-27

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/428 ,  H01L21/383 ,  H01L21/385

CPC classification number: H01L29/78696 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/7869

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US10062846B2

公开(公告)日：2018-08-28

申请号：US15297567

申请日：2016-10-19

Applicant: Japan Display Inc.

Inventor： Toshifumi Mimura ,  Masahiro Watabe ,  Toshihiro Sato

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/50 ,  H01L27/32

CPC classification number: H01L51/0018 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5012 ,  H01L51/5237 ,  H01L51/5253 ,  H01L2227/323

Abstract: A manufacturing method of a display device includes: forming, in a resin layer including a display area where a plurality of lower electrodes is formed and a peripheral area surrounding the display area, a band-like groove which divides the resin layer in a form of surrounding the display area; forming an organic electroluminescence layer including a light emitting layer, on the resin layer and inside the band-like groove in such a way as to be placed on the plurality of lower electrodes; irradiating the organic electroluminescence layer with a pulse laser and thus eliminating the organic electroluminescence layer in such a way that a part of the organic electroluminescence layer is left in a shape of an island at least on a bottom surface of the band-like groove and that the bottom surface of the band-like groove is continuously exposed in the form of surrounding the display area.

公开(公告)号：US11114568B2

公开(公告)日：2021-09-07

申请号：US16831958

申请日：2020-03-27

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L29/423 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US10608016B2

公开(公告)日：2020-03-31

申请号：US16286146

申请日：2019-02-26

Applicant: Japan Display Inc.

Inventor： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US20180226498A1

公开(公告)日：2018-08-09

申请号：US15880673

申请日：2018-01-26

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Masahiro Watabe ,  Masayoshi Fuchi ,  Isao Suzumura ,  Marina Shiokawa

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L21/477 ,  H01L29/78609 ,  H01L29/7869

Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.

公开(公告)号：US20180219029A1

公开(公告)日：2018-08-02

申请号：US15867847

申请日：2018-01-11

Applicant: Japan Display Inc.

Inventor： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1237 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2201/501 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.