公开(公告)号：US20230230800A1

公开(公告)日：2023-07-20

申请号：US18123850

申请日：2023-03-20

Applicant: KLA Corporation

Inventor： Marcel Trimpl

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J37/3177 ,  H01J2237/24475 ,  H01J2237/24415 ,  H01J2237/2448

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

公开(公告)号：US11699607B2

公开(公告)日：2023-07-11

申请号：US17483545

申请日：2021-09-23

Applicant: KLA Corporation

Inventor： John Gerling ,  Lawrence Muray ,  Alan Brodie ,  James Spallas ,  Marcel Trimpl

IPC: H01L21/67 ,  H01J37/26 ,  H01J37/244 ,  G01N23/203 ,  G01N23/2251

CPC classification number: H01L21/67288 ,  G01N23/203 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/26 ,  G01N2223/6116 ,  G01N2223/646

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

公开(公告)号：US20250072139A1

公开(公告)日：2025-02-27

申请号：US18809802

申请日：2024-08-20

Applicant: KLA Corporation

Inventor： David L. Brown ,  Jehn-Huar Howard Chern ,  Marcel Trimpl

IPC: H01L27/146

Abstract: Photon or electron detectors may include polycrystalline silicon resistive gates with voltage gradients applied to reduce lag and improve operating speeds. The polycrystalline silicon resistive gates may be doped polycrystalline silicon which is heavily doped with donor atoms or acceptor atoms and ion-implanted with an electrically inactive species. The electrically inactive species may be implanted in a pattern to form multiple ion-implanted regions with different resistivities. The ion-implanted regions are formed in select patterns to control the resistivity of the polycrystalline silicon resistive gates and to modify the lateral electric field across the differentially-biased polycrystalline silicon resistive gate. The X-ray detectors may also include a circuit element with a current-mode differential connection to improve clock feedthrough and power dissipation characteristics.

公开(公告)号：US20210066035A1

公开(公告)日：2021-03-04

申请号：US17000231

申请日：2020-08-21

Applicant: KLA Corporation

Inventor： Marcel Trimpl

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26 ,  H01J37/317

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor

公开(公告)号：US20220399220A1

公开(公告)日：2022-12-15

申请号：US17483545

申请日：2021-09-23

Applicant: KLA Corporation

Inventor： John Gerling ,  Lawrence Muray ,  Alan Brodie ,  James Spallas ,  Marcel Trimpl

IPC: H01L21/67 ,  H01J37/26 ,  H01J37/244 ,  G01N23/2251 ,  G01N23/203

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

公开(公告)号：US11610757B2

公开(公告)日：2023-03-21

申请号：US17000231

申请日：2020-08-21

Applicant: KLA Corporation

Inventor： Marcel Trimpl

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/26 ,  H01J37/317

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.