公开(公告)号：US08450736B2

公开(公告)日：2013-05-28

申请号：US13006591

申请日：2011-01-14

Applicant: Young-Wook Lee ,  Woo-Geun Lee ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Ji-Soo Oh

Inventor： Young-Wook Lee ,  Woo-Geun Lee ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Ji-Soo Oh

IPC: H01L29/786

CPC classification number: H01L27/124 ,  H01L21/76834 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

公开(公告)号：US08445301B2

公开(公告)日：2013-05-21

申请号：US13027453

申请日：2011-02-15

Applicant: Kap-Soo Yoon ,  Woo-Geun Lee ,  Bong-Kyun Kim ,  Sung-Hoon Yang ,  Ki-Won Kim ,  Hyun-Jung Lee

Inventor： Kap-Soo Yoon ,  Woo-Geun Lee ,  Bong-Kyun Kim ,  Sung-Hoon Yang ,  Ki-Won Kim ,  Hyun-Jung Lee

IPC: H01L21/00

CPC classification number: H01L29/78693 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5203

Abstract: Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.

Abstract translation: 提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极 面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

公开(公告)号：US08058114B2

公开(公告)日：2011-11-15

申请号：US12797527

申请日：2010-06-09

Applicant: Jang-Soo Kim ,  Hong-Long Ning ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Shi-Yul Kim ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ki-Won Kim ,  Byeong-Jin Lee ,  Young-Wook Lee ,  Jong-In Kim ,  Byeong-Beom Kim ,  Nam-Seok Suh

Inventor： Jang-Soo Kim ,  Hong-Long Ning ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Shi-Yul Kim ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ki-Won Kim ,  Byeong-Jin Lee ,  Young-Wook Lee ,  Jong-In Kim ,  Byeong-Beom Kim ,  Nam-Seok Suh

IPC: H01L21/84 ,  H01L21/336

CPC classification number: G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1288

Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.

Abstract translation: 栅极线包括形成在基底基板上的第一籽晶层和形成在第一籽晶层上的第一金属层。 在基底基板上形成第一绝缘层。 在基底基板上形成第二绝缘层。 这里，在与栅极线交叉的方向上通过第二绝缘层形成线沟槽。 数据线包括形成在线沟槽下方的第二晶种层和形成在线沟槽中的第二金属层。 像素电极形成在基底基板的像素区域中。 因此，使用绝缘层形成预定深度的沟槽，并且通过电镀方法形成金属层，从而可以形成具有足够厚度的金属线。

公开(公告)号：US20110274954A1

公开(公告)日：2011-11-10

申请号：US13142826

申请日：2009-11-25

Applicant: Gyu-Bong Cho ,  Kwon-Koo Cho ,  Tae-Hyeon Nam ,  Hyo-Jun Ahn ,  Ki-Won Kim ,  Jou-Hyeon Ahn

Inventor： Gyu-Bong Cho ,  Kwon-Koo Cho ,  Tae-Hyeon Nam ,  Hyo-Jun Ahn ,  Ki-Won Kim ,  Jou-Hyeon Ahn

IPC: H01M10/36 ,  H01R4/30 ,  H01M10/02

CPC classification number: H01M2/202 ,  H01M2/30 ,  H01R4/56

Abstract: Disclosed is a thread-type battery. The battery of the present invention comprises a flexible body unit, a first pole terminal which is formed at one end of the body unit, and which protrudes so as to be insertable into a first external terminal, and a second pole terminal which is formed at the other end of the body unit which has a shape in which a second external terminal is to be inserted, and which has a polarity opposite that of the first pole terminal. The present invention enables users to easily connect positive poles and negative poles.

Abstract translation: 公开了一种线型电池。 本发明的电池包括柔性体单元，形成在本体单元一端的第一极端子，突出地插入到第一外部端子中，第二极端子形成在第一极端子 所述主体单元的另一端具有插入第二外部端子的形状，并且具有与所述第一极端子的极性相反的极性。 本发明使用户能够容易地连接正极和负极。

公开(公告)号：US20100261322A1

公开(公告)日：2010-10-14

申请号：US12797527

申请日：2010-06-09

Applicant: Jang-Soo Kim ,  Hong-Long Ning ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Shi-Yul Kim ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ki-Won Kim ,  Byeong-Jin Lee ,  Young-Wook Lee ,  Jong-In Kim ,  Byeong-Beom Kim ,  Nam-Seok Suh

Inventor： Jang-Soo Kim ,  Hong-Long Ning ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Shi-Yul Kim ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Jae-Hyoung Youn ,  Woo-Geun Lee ,  Yang-Ho Bae ,  Pil-Sang Yun ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ki-Won Kim ,  Byeong-Jin Lee ,  Young-Wook Lee ,  Jong-In Kim ,  Byeong-Beom Kim ,  Nam-Seok Suh

IPC: H01L21/8234 ,  H01L21/336

CPC classification number: G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1288

Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.

Abstract translation: 栅极线包括形成在基底基板上的第一籽晶层和形成在第一籽晶层上的第一金属层。 在基底基板上形成第一绝缘层。 在基底基板上形成第二绝缘层。 这里，在与栅极线交叉的方向上通过第二绝缘层形成线沟槽。 数据线包括形成在线沟槽下方的第二晶种层和形成在线沟槽中的第二金属层。 像素电极形成在基底基板的像素区域中。 因此，使用绝缘层形成预定深度的沟槽，并且通过电镀方法形成金属层，从而可以形成具有足够厚度的金属线。

公开(公告)号：US20080066832A1

公开(公告)日：2008-03-20

申请号：US11629465

申请日：2004-07-15

Applicant: Tae-Hyun Nam ,  Hyo-Jun Ahn ,  Ki-Won Kim ,  Kwon-Koo Cho ,  Jou-Hyeon Ahn ,  Su-Mun Park ,  Hwi-Beom Shin ,  Hyun-Chil Choi ,  Jong-Uk Kim ,  Gyu-Bong Cho

Inventor： Tae-Hyun Nam ,  Hyo-Jun Ahn ,  Ki-Won Kim ,  Kwon-Koo Cho ,  Jou-Hyeon Ahn ,  Su-Mun Park ,  Hwi-Beom Shin ,  Hyun-Chil Choi ,  Jong-Uk Kim ,  Gyu-Bong Cho

IPC: C22C14/00 ,  C22C19/03 ,  C22C19/05

CPC classification number: H01M4/0471 ,  C22C14/00 ,  C22C19/05 ,  H01M4/0421 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/581 ,  H01M4/661 ,  H01M4/70

Abstract: The present invention relates to a hybrid superelastic metal-metal sulfide materials for current collector and anode of battery, which use two phase alloy of Ti—Ni or three phase alloy of Ti—Ni—X as current collector, and produce a Ti, Ni sulfide at a surface of current collector with an inside sulfide method to allow to use as an active materials of positive electrode, and perform a role of current collector and anode of battery with one material by endowing all materials with superelastic characteristic, and it have an excellent effect providing a hybrid superelastic metal-metal sulfide materials for current collector and anode having thin plate and fine wire shape.

Abstract translation: 本发明涉及使用Ti-Ni或Ti-Ni-X的三相合金的两相合金作为集电体的电池用集电体和负极的混合超弹性金属 - 金属硫化物材料，并且生产Ti，Ni 硫化物在集电器的表面具有内部硫化物方法，以允许用作正电极的活性材料，并通过赋予所有材料具有超弹性特性，通过一种材料来发挥电池集电极和阳极的作用，并且具有 优异的效果，提供具有薄板和细线形状的集电器和阳极的混合超弹性金属 - 金属硫化物材料。

公开(公告)号：US08891805B2

公开(公告)日：2014-11-18

申请号：US13440329

申请日：2012-04-05

Applicant: Jung-Eun Han ,  Jang-Hoon Kang ,  Ki-Won Kim

Inventor： Jung-Eun Han ,  Jang-Hoon Kang ,  Ki-Won Kim

IPC: H04R1/02 ,  H04R25/00 ,  H04R9/06

CPC classification number: H04R9/06 ,  H04R1/025 ,  H04R1/34 ,  H04R2201/025 ,  H04R2499/11

Abstract: A speaker apparatus selects a path which emits a speaker sound. The speaker apparatus includes a speaker unit for outputting the sound generated from voice data, a body including at least one or more emission paths for guiding and emitting the sound output from the speaker unit, and a member for opening or shutting out at least one emission path.

Abstract translation: 扬声器装置选择发出扬声器声音的路径。 扬声器装置包括用于输出从语音数据产生的声音的扬声器单元，包括用于引导和发射从扬声器单元输出的声音的至少一个或多个发射路径的主体，以及用于打开或关闭至少一个发射 路径。

公开(公告)号：US08772897B2

公开(公告)日：2014-07-08

申请号：US13049783

申请日：2011-03-16

Applicant: Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

Inventor： Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

IPC: H01L27/146

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78645 ,  H01L29/78648

Abstract: A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案，源电极和漏电极电绝缘。

公开(公告)号：US08723179B2

公开(公告)日：2014-05-13

申请号：US12957743

申请日：2010-12-01

Applicant: Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US08369813B2

公开(公告)日：2013-02-05

申请号：US12849413

申请日：2010-08-03

Applicant: Sung-Hoon Jeong ,  Ki-Won Kim ,  Ju-Hee Chang ,  Sung-Hwan Ko

Inventor： Sung-Hoon Jeong ,  Ki-Won Kim ,  Ju-Hee Chang ,  Sung-Hwan Ko

IPC: H04B1/10 ,  H04B1/38

CPC classification number: H04B1/1036

Abstract: An apparatus and a method for reducing cross-talk between audio channels in a mobile terminal are provided. The apparatus includes an ear jack, a radio signal tuner, a baseband, and a switching unit. The ear jack includes a common port for a reference potential of an earphone and a radio signal. The radio signal tuner processes a radio signal input via the common port. The baseband determines an on/off state of a radio reception function to output a control signal. The switching unit connects the common port of the ear jack to one of a ground and the radio signal tuner according to the control signal.

Abstract translation: 提供一种用于减少移动终端中的音频信道之间的串扰的装置和方法。 该装置包括耳塞，无线电信号调谐器，基带和切换单元。 耳塞包括用于耳机的参考电位的公共端口和无线电信号。 无线电信号调谐器处理通过公共端口输入的无线电信号。 基带确定无线电接收功能的开/关状态以输出控制信号。 开关单元根据控制信号将耳塞的公共端口连接到地之一和无线电信号调谐器。