公开(公告)号：US08575616B2

公开(公告)日：2013-11-05

申请号：US13305435

申请日：2011-11-28

Applicant: KiTae Kim

Inventor： KiTae Kim

IPC: H01L29/423 ,  H01L29/786

CPC classification number: H01L21/02675 ,  H01L27/124 ,  H01L27/1281 ,  H01L27/1288 ,  H01L29/66765

Abstract: A thin film transistor substrate and a method for manufacturing the same are discussed, in which the thin film transistor comprises a gate line and a data line arranged on a substrate to cross each other; a gate electrode connected with the gate line below the gate line; an active layer formed on the gate electrode; an etch stopper formed on the active layer; an ohmic contact layer formed on the etch stopper; source and drain electrodes formed on the ohmic contact layer; and a pixel electrode connected with the drain electrode. It is possible to prevent a crack from occurring in the gate insulating film during irradiation of the laser and prevent resistance of the gate electrode from being increased.

Abstract translation: 讨论薄膜晶体管基板及其制造方法，其中薄膜晶体管包括布置在基板上以彼此交叉的栅极线和数据线; 栅极电极，与栅极线下方的栅极线连接; 形成在栅电极上的有源层; 形成在有源层上的蚀刻停止层; 形成在蚀刻停止器上的欧姆接触层; 源极和漏极形成在欧姆接触层上; 以及与漏电极连接的像素电极。 可以防止在激光照射期间在栅极绝缘膜中发生裂纹，并且防止栅电极的电阻增加。