TREATED CERAMIC CHAMBER PARTS
    2.
    发明公开

    公开(公告)号:US20240308926A1

    公开(公告)日:2024-09-19

    申请号:US18577889

    申请日:2022-08-04

    CPC classification number: C04B41/0072 B24C1/003 H01J37/32495

    Abstract: A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.

    METHOD FOR COATING SURFACES
    8.
    发明申请
    METHOD FOR COATING SURFACES 审中-公开
    涂层表面处理方法

    公开(公告)号:US20160254125A1

    公开(公告)日:2016-09-01

    申请号:US14634129

    申请日:2015-02-27

    CPC classification number: H01J37/32495 C23C4/04 C23C4/11 C23C4/18

    Abstract: A method for providing a protective layer over a substrate is provided. A ceramic layer is deposited over the substrate, wherein the ceramic layer has a porosity. A localized heating of a region of the ceramic layer to a temperature that causes the ceramic layer to melt without damaging the substrate is provided, wherein the melting the ceramic layer reduces the porosity or seals fissures or columnar grain boundaries. The region of the ceramic layer heated by the localized heating is scanned over the ceramic layer.

    Abstract translation: 提供了一种在衬底上提供保护层的方法。 陶瓷层沉积在衬底上,其中陶瓷层具有孔隙率。 提供了将陶瓷层的区域局部加热到导致陶瓷层熔化而不损坏基底的温度,其中熔化陶瓷层减少孔隙率或密封裂缝或柱状晶界。 通过局部加热加热的陶瓷层的区域在陶瓷层上扫描。

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