公开(公告)号：US20140034096A1

公开(公告)日：2014-02-06

申请号：US14050307

申请日：2013-10-09

Applicant: Lam Research Corporation

Inventor： Grant Peng ,  David Mui ,  Shih-Chung Kon

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: An apparatus for cleaning a substrate includes a dispense head configured to supply a liquid medium as a meniscus to the surface of the substrate and a rinse head that is equipped with at least an inlet conduit to supply rinse chemical to a top substrate surface as a meniscus. An outlet conduit is disposed on either side of the inlet conduit and is configured to remove the rinse chemical and liquid medium from the substrate surface. The inlet conduit and the outlet conduits are perpendicular to the surface of the rinse head that faces the substrate and parallel to one another. A first and second transducers are disposed in a portion of the rinse head between the inlet conduit and each of the outlet conduits. The transducers are configured to transmit acoustic energy to the meniscus when formed between the surface of the rinse head and the substrate.

Abstract translation: 用于清洁基底的装置包括分配头，其配置为将液体介质作为弯月面供应到基底的表面;以及冲洗头，其配备有至少一个入口导管，以将冲洗化学品供应到顶部基底表面作为弯液面 。 出口导管设置在入口管道的两侧，并被构造成从衬底表面去除漂洗的化学和液体介质。 入口导管和出口导管垂直于冲洗头的面向基板并彼此平行的表面。 第一和第二换能器设置在冲洗头的一部分在入口导管和每个出口导管之间。 换能器被配置成当在冲洗头的表面和基底之间形成时将声能传递到弯液面。

公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.