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公开(公告)号：US10720537B2
公开(公告)日：2020-07-21
申请号：US16222496
申请日：2018-12-17
Applicant: LG ELECTRONICS INC.
Inventor： Indo Chung , Seunghwan Shim , Ilhyoung Jung , Jeongbeom Nam
IPC: H01L31/0224 , H01L31/0747 , H01L31/0216 , H01L31/068 , H01L31/18
Abstract: Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.
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公开(公告)号：US12243861B2
公开(公告)日：2025-03-04
申请号：US17770855
申请日：2019-10-22
Applicant: LG ELECTRONICS INC.
Inventor： Dohan Kim , Jeonghyo Kwon , Soohyun Kim , Indo Chung
Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.
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公开(公告)号：US11004994B2
公开(公告)日：2021-05-11
申请号：US15154532
申请日：2016-05-13
Applicant: LG ELECTRONICS INC.
Inventor： Indo Chung , Juhong Yang , Eunjoo Lee , Mihee Heo
IPC: H01L31/02 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0747 , H01L31/049 , H01L31/18
Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.
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公开(公告)号：US10566488B2
公开(公告)日：2020-02-18
申请号：US14811475
申请日：2015-07-28
Applicant: LG ELECTRONICS INC.
Inventor： Seunghwan Shim , Ilhyoung Jung , Indo Chung , Eunhye Youn
IPC: H01L31/0224 , H01L31/18 , H01L31/077 , H01L31/028 , H01L31/0368 , H01L31/0352 , H01L31/0747
Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.
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公开(公告)号：US09412888B2
公开(公告)日：2016-08-09
申请号：US13886813
申请日：2013-05-03
Applicant: LG Electronics Inc.
Inventor： Indo Chung , Taehee Shin , Ilhyoung Jung , Jinah Kim
IPC: H01L31/052 , H01L31/0352 , H01L31/068 , H01L31/18
CPC classification number: H01L31/035272 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type, and electrodes including a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate. The emitter layer includes a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion. The low-concentration doping portion has a higher resistance than the high-concentration doping portion. The high-concentration doping portion includes a first region having a first resistance, and a second region having a second resistance higher than the first resistance.
Abstract translation: 太阳能电池包括具有第一导电类型的半导体衬底，在半导体衬底的表面上的发射极层，具有不同于第一导电类型的第二导电类型的发射极层，以及包括电连接到发射极的第一电极的电极 层和与半导体衬底电连接的第二电极。 发射极层包括与第一电极相邻的高浓度掺杂部分和不包括高浓度掺杂部分的区域中的低浓度掺杂部分。 低浓度掺杂部分具有比高浓度掺杂部分更高的电阻。 高浓度掺杂部分包括具有第一电阻的第一区域和具有高于第一电阻的第二电阻的第二区域。
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Patent Agency Ranking
公开(公告)号：US10147828B2
公开(公告)日：2018-12-04
申请号：US15198212
申请日：2016-06-30
Applicant: LG Electronics Inc.
Inventor： Indo Chung , Taehee Shin , Ilhyoung Jung , Jinah Kim
IPC: H01L31/0352 , H01L31/068 , H01L31/18
Abstract: A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type, and electrodes including a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate. The emitter layer includes a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion. The low-concentration doping portion has a higher resistance than the high-concentration doping portion. The high-concentration doping portion includes a first region having a first resistance, and a second region having a second resistance higher than the first resistance.
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公开(公告)号：US20160380138A1
公开(公告)日：2016-12-29
申请号：US15198212
申请日：2016-06-30
Applicant: LG Electronics Inc.
Inventor： Indo Chung , Taehee Shin , Ilhyoung Jung , Jinah Kim
IPC: H01L31/0352 , H01L31/068 , H01L31/18
CPC classification number: H01L31/035272 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type, and electrodes including a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate. The emitter layer includes a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion. The low-concentration doping portion has a higher resistance than the high-concentration doping portion. The high-concentration doping portion includes a first region having a first resistance, and a second region having a second resistance higher than the first resistance.
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公开(公告)号：US20130327381A1
公开(公告)日：2013-12-12
申请号：US13886813
申请日：2013-05-03
Applicant: LG Electronics Inc.
Inventor： Indo Chung , Taehee Shin , Ilhyoung Jung , Jinah Kim
IPC: H01L31/0352
CPC classification number: H01L31/035272 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type, and electrodes including a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate. The emitter layer includes a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion. The low-concentration doping portion has a higher resistance than the high-concentration doping portion. The high-concentration doping portion includes a first region having a first resistance, and a second region having a second resistance higher than the first resistance.
Abstract translation: 太阳能电池包括具有第一导电类型的半导体衬底，在半导体衬底的表面上的发射极层，具有不同于第一导电类型的第二导电类型的发射极层，以及包括电连接到发射极的第一电极的电极 层和与半导体衬底电连接的第二电极。 发射极层包括与第一电极相邻的高浓度掺杂部分和不包括高浓度掺杂部分的区域中的低浓度掺杂部分。 低浓度掺杂部分具有比高浓度掺杂部分更高的电阻。 高浓度掺杂部分包括具有第一电阻的第一区域和具有高于第一电阻的第二电阻的第二区域。
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9.发明授权公开(公告)号：US12278221B2
公开(公告)日：2025-04-15
申请号：US17780873
申请日：2019-12-03
Applicant: LG ELECTRONICS INC.
Inventor： Jeonghyo Kwon , Soohyun Kim , Indo Chung
IPC: H01L25/075 , H10H20/857 , H10H20/01
Abstract: Discussed is a display device including a base portion; assembly electrodes that extend in one direction and are disposed on the base portion at predetermined intervals; a dielectric layer deposited on the base portion to cover the assembly electrodes; a first wiring electrode that extends in the same direction as the assembly electrodes and is disposed on the dielectric layer so as not to overlap the assembly electrodes; a partition wall portion deposited on the dielectric layer while arranging cells at predetermined intervals to overlap the assembly electrodes and the first wiring electrode along an extension direction of the assembly electrodes; and semiconductor light-emitting elements seated in the cells, respectively, wherein a solder layer electrically connecting a semiconductor light-emitting element seated in a cell and the first wiring electrode overlapping the cell is filled in the cell from among the plurality semiconductor light emitting elements and the cells.
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公开(公告)号：US12113161B2
公开(公告)日：2024-10-08
申请号：US17638444
申请日：2019-08-30
Applicant: LG ELECTRONICS INC.
Inventor： Indo Chung , Jeonghyo Kwon , Dohan Kim
CPC classification number: H01L33/62 , H01L27/156 , H01L33/005 , H01L33/382 , H01L2933/0016 , H01L2933/0066
Abstract: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.
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