公开(公告)号：US09444005B2

公开(公告)日：2016-09-13

申请号：US14816129

申请日：2015-08-03

Applicant: Lextar Electronics Corporation

Inventor： Bo-Yu Chen ,  Po-Hung Tsou ,  Tzu-Hung Chou

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/145 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

公开(公告)号：US20150340556A1

公开(公告)日：2015-11-26

申请号：US14816129

申请日：2015-08-03

Applicant: Lextar Electronics Corporation

Inventor： Bo-Yu Chen ,  Po-Hung Tsou ,  Tzu-Hung Chou

IPC: H01L33/14 ,  H01L33/42

CPC classification number: H01L33/145 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

公开(公告)号：US20150034982A1

公开(公告)日：2015-02-05

申请号：US14228319

申请日：2014-03-28

Applicant: Lextar Electronics Corporation

Inventor： Bo-Yu Chen ,  Po-Hung Tsou ,  Tzu-Hung Chou

IPC: H01L33/14

CPC classification number: H01L33/145 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Abstract translation: 提供发光二极管结构。 发光二极管结构包括衬底，发光多层结构，第一电流阻挡层，第一电流扩展层，第二电流阻挡层和第二电流扩展层。 发光多层结构通过堆叠形成在基板上。 第一电流阻挡层形成在发光多层结构的一部分上。 第一电流扩展层覆盖第一电流阻挡层和发光多层结构。 第二电流阻挡层形成在第一电流扩展层的一部分上。 第二电流阻挡层的正交投影设置在第一电流阻挡层的正交投影中。 第二电流扩展层覆盖第二电流阻挡层和第一电流扩展层。

公开(公告)号：US09117959B2

公开(公告)日：2015-08-25

申请号：US14228319

申请日：2014-03-28

Applicant: Lextar Electronics Corporation

Inventor： Bo-Yu Chen ,  Po-Hung Tsou ,  Tzu-Hung Chou

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/145 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Abstract translation: 提供发光二极管结构。 发光二极管结构包括基板，发光多层结构，第一电流阻挡层，第一电流扩展层，第二电流阻挡层和第二电流扩展层。 发光多层结构通过堆叠形成在基板上。 第一电流阻挡层形成在发光多层结构的一部分上。 第一电流扩展层覆盖第一电流阻挡层和发光多层结构。 第二电流阻挡层形成在第一电流扩展层的一部分上。 第二电流阻挡层的正交投影设置在第一电流阻挡层的正交投影中。 第二电流扩展层覆盖第二电流阻挡层和第一电流扩展层。