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公开(公告)号：US09857247B2
公开(公告)日：2018-01-02
申请号：US14399623
申请日：2013-05-07
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Samuel Huber , Johan Raman , Pieter Rombouts , Appolonius Jacobus Van Der Wiel
CPC classification number: G01L1/2293 , G01L1/125 , G01L1/18 , G01R33/0029 , G01R33/0035 , G01R33/07
Abstract: A method determines isotropic stress by means of a Hall element which includes a plate-shaped area made of a doped semiconductor material and comprises four contacts contacting the plate-shaped area and forming corners of a quadrangle, two neighboring corners of the quadrangle defining an edge thereof. At least one van der Pauw transresistance value in at least one van der Pauw measurement set-up of the Hall element is determined, wherein the four contacts of the Hall element form contact pairs, a contact pair comprising two contacts defining neighboring corners of the quadrangle. One contact pair supplies a current and the other contact pair measures a voltage. A relationship between the supplied current and the measured voltage defines the Van der Pauw transresistance value. The method comprises determining a stress signal which depends on the at least one Van der Pauw transresistance value and determining isotropic stress.
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2.发明申请Method and Device for Sensing Isotropic Stress and Providing a Compensation for the Piezo-Hall Effect 有权用于感应各向同性应力并提供压电霍尔效应补偿的方法和装置公开(公告)号：US20150142342A1
公开(公告)日：2015-05-21
申请号：US14399623
申请日：2013-05-07
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Samuel Huber , Johan Raman , Pieter Rombouts , Appolonius Jacobus Van Der Wiel
CPC classification number: G01L1/2293 , G01L1/125 , G01L1/18 , G01R33/0029 , G01R33/0035 , G01R33/07
Abstract: A method determines isotropic stress by means of a Hall element which includes a plate-shaped area made of a doped semiconductor material and comprises four contacts contacting the plate-shaped area and forming corners of a quadrangle, two neighboring corners of the quadrangle defining an edge thereof. At least one van der Pauw transresistance value in at least one van der Pauw measurement set-up of the Hall element is determined, wherein the four contacts of the Hall element form contact pairs, a contact pair comprising two contacts defining neighbouring corners of the quadrangle. One contact pair supplies a current and the other contact pair measures a voltage. A relationship between the supplied current and the measured voltage defines the Van der Pauw transresistance value. The method comprises determining a stress signal which depends on the at least one Van der Pauw transresistance value and determining isotropic stress.
Abstract translation: 一种方法通过霍尔元件确定各向同性应力，霍尔元件包括由掺杂半导体材料制成的板状区域，并且包括接触板形区域和形成四边形角部的四个触点，四边形的两个相邻拐角限定边缘 其中。 确定霍尔元件的至少一个范德波测量装置中的至少一个范德波沃阻抗值，其中霍尔元件的四个触点形成接触对，触点对包括限定四边形的相邻角的两个触点 。 一个触点对提供电流，另一个触点对测量电压。 供电电流与测量电压之间的关系定义了范德波沃跨阻值。 该方法包括确定取决于至少一个范德高阻抗值并确定各向同性应力的应力信号。
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3.发明申请Hall Sensor Readout System with Offset Determination Using the Hall Element Itself 审中-公开霍尔传感器读出系统，具有使用霍尔元件自身的偏移确定公开(公告)号：US20160252589A1
公开(公告)日：2016-09-01
申请号：US15034738
申请日：2014-11-06
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Johan Raman , Pieter Rombouts
CPC classification number: G01R33/0035 , G01R33/0029 , G01R33/0082 , G01R33/07
Abstract: A method for providing offset compensation in a Hall sensor comprising at least one Hall element having a plate-shaped sensor element made of a doped semiconductor material, comprises using measurements on the Hall element itself. The method comprises obtaining a first readout signal (VH) from the at least one Hall element which is substantially dependent on the magnetic field, obtaining a second readout signal (VP) from the at least one Hall element which is substantially independent of the magnetic field, and using the second readout signal (VP) for obtaining a prediction ({circumflex over (V)}O) of the offset (VO) on the first readout signal (VH).
Abstract translation: 一种用于在霍尔传感器中提供偏移补偿的方法，包括至少一个具有由掺杂半导体材料制成的板状传感器元件的霍尔元件，包括对霍尔元件本身进行测量。 该方法包括从至少一个霍尔元件获得基本上取决于磁场的第一读出信号（VH），从至少一个霍尔元件获得基本上与磁场无关的第二读出信号（VP） ，并且使用第二读出信号（VP）获得第一读出信号（VH）上的偏移量（VO）的预测（V（V）} O）。
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公开(公告)号：US10345394B2
公开(公告)日：2019-07-09
申请号：US15034738
申请日：2014-11-06
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Johan Raman , Pieter Rombouts
Abstract: A method for providing offset compensation in a Hall sensor comprising at least one Hall element having a plate-shaped sensor element made of a doped semiconductor material, comprises using measurements on the Hall element itself. The method comprises obtaining a first readout signal (VH) from the at least one Hall element which is substantially dependent on the magnetic field, obtaining a second readout signal (VP) from the at least one Hall element which is substantially independent of the magnetic field, and using the second readout signal (VP) for obtaining a prediction ({circumflex over (V)}O) of the offset (VO) on the first readout signal (VH).
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