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公开(公告)号：US20240195834A1
公开(公告)日：2024-06-13
申请号：US18221007
申请日：2023-07-12
Applicant: Mellanox Technologies, Ltd. , Bar-ILan University
Inventor： Tali Septon , Elad Mentovich , Moshe B. Oron , Yonatan Piasetzky , Yuval Idan , Eliahu Cohen , Avshalom Elitzur , Taylor Lee Patti
CPC classification number: H04L63/1475 , H04B10/70 , H04L63/1416
Abstract: Methods, apparatus, and computer program products for quantum communications and quantum information processing are provided. An example method includes determining a received state of a qubit received via a quantum communication link where the received state includes one or more properties of the received qubit. The method further accesses a transmitted state of the qubit where the transmitted state includes one or more properties of the qubit as transmitted. The method continues by comparing the one or more properties of the qubit in the received state with the one or more properties of the qubit in the transmitted state. Finally, the method detects a condition of the quantum communication link based on the comparison between the received state and the transmitted state. In doing so, the embodiments operate to characterize the noise level, security, etc. of a quantum communication interconnect, link, or channel.
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公开(公告)号：US12224550B2
公开(公告)日：2025-02-11
申请号：US17156902
申请日：2021-01-25
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Tali Septon , Itshak Kalifa , Elad Mentovich , Matan Galanty , Yaakov Gridish , Hanan Shumacher , Vadim Balakhovski , Juan Jose Vegas Olmos
IPC: H01S5/00
Abstract: A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.
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公开(公告)号：US20230221588A1
公开(公告)日：2023-07-13
申请号：US17810068
申请日：2022-06-30
Applicant: Mellanox Technologies, Ltd.
Inventor： Moshe B. Oron , Elad Mentovich , Tali Septon , Oren Steinberg , Isabelle Cestier
CPC classification number: G02F1/01708 , G02F1/0158 , G02F1/0159 , H01S5/22 , H01S5/0265 , H01S5/0601 , G02F2202/06 , G02F2202/102 , H01S5/34
Abstract: High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.
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公开(公告)号：US20230198625A1
公开(公告)日：2023-06-22
申请号：US17644625
申请日：2021-12-16
Applicant: Mellanox Technologies, Ltd.
Inventor： Moshe B. Oron , Elad Mentovich , Tali Septon
IPC: H04B10/548 , G02F1/225 , G02F1/21
CPC classification number: H04B10/548 , G02F1/212 , G02F1/2255
Abstract: High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ≤ 4 Ohms. The interface resistance is a serial resistance between the interface layer and respective electrodes of the pluralities of segmented capacitive loading electrodes.
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5.发明授权公开(公告)号：US11949463B1
公开(公告)日：2024-04-02
申请号：US18220990
申请日：2023-07-12
Applicant: Mellanox Technologies, Ltd. , Bar-Ilan University
Inventor： Tali Septon , Elad Mentovich , Moshe B Oron , Yonatan Piasetzky , Yuval Idan , Eliahu Cohen , Avshalom C Elitzur , Taylor Lee Patti
IPC: H04B10/70
CPC classification number: H04B10/70
Abstract: Various embodiments of the present disclosure are directed to accessing a quantum communication channel undetected and/or characterizing this communication channel based upon attempted access. An example method includes accessing a quantum communication channel transmitting one or more qubits. The method includes the introduction of a noise signal to the quantum communication channel and then applying in its absence one or more weak or variable-strength measurements to the quantum communication channel. A strength of at least one measurement of the one or more measurements is based at least in part upon the current noise signal. The method further includes obtaining information associated with the one or more qubits based on the one or more measurements.
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Patent Agency Ranking
公开(公告)号：US20240039711A1
公开(公告)日：2024-02-01
申请号：US17878464
申请日：2022-08-01
Applicant: Mellanox Technologies, Ltd.
Inventor： Tali Septon , Elad Mentovich , Yonatan Piasetzky , Moshe B. Oron , Isabelle Cestier
CPC classification number: H04L9/0855 , H04B10/70
Abstract: Bi-directional quantum interconnects are provided that include a first communication module and a second communication module. The first communication module includes a first quantum transmitter and a first quantum receiver, and the second communication module includes a second quantum transmitter and a second quantum receiver. The example interconnect further includes a first communication medium communicably coupling the first communication module and the second communication module such that communication is provided between the first quantum transmitter and the second quantum receiver and between the second quantum transmitter and the first quantum receiver via the first communication medium. The first quantum transmitter and the second quantum transmitter generate qubits having first and second quantum characteristics, respectively, to allow for bi-directional quantum communication over a common channel.
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公开(公告)号：US11855700B2
公开(公告)日：2023-12-26
申请号：US17644625
申请日：2021-12-16
Applicant: Mellanox Technologies, Ltd.
Inventor： Moshe B. Oron , Elad Mentovich , Tali Septon
IPC: H04B10/548 , G02F1/21 , G02F1/225
CPC classification number: H04B10/548 , G02F1/212 , G02F1/2255
Abstract: High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ≤4 Ohms. The interface resistance is a serial resistance between the interface layer and respective electrodes of the pluralities of segmented capacitive loading electrodes.
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公开(公告)号：US20230208517A1
公开(公告)日：2023-06-29
申请号：US17568441
申请日：2022-01-04
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Paraskevas Bakopoulos , Elad Mentovich , Tali Septon , Dimitrios Syrivelis , Ioannis (Giannis) Patronas , Dimitrios Kalavrouziotis , Moshe Oron
IPC: H04B10/11
CPC classification number: H04B10/11
Abstract: An apparatus comprises a support structure and one or more first optical components on the support structure that communicatively couple with a first endpoint. The one or more first optical components are configured to output and receive optical signals that travel over a free space medium to establish a secure link between the first endpoint and a second endpoint.
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公开(公告)号：US11990935B2
公开(公告)日：2024-05-21
申请号：US17568441
申请日：2022-01-04
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Paraskevas Bakopoulos , Elad Mentovich , Tali Septon , Dimitrios Syrivelis , Ioannis (Giannis) Patronas , Dimitrios Kalavrouziotis , Moshe Oron
Abstract: An apparatus comprises a support structure and one or more first optical components on the support structure that communicatively couple with a first endpoint. The one or more first optical components are configured to output and receive optical signals that travel over a free space medium to establish a secure link between the first endpoint and a second endpoint.
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公开(公告)号：US11955778B2
公开(公告)日：2024-04-09
申请号：US17156970
申请日：2021-01-25
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Tali Septon , Itshak Kalifa , Elad Mentovich , Matan Galanty , Yaakov Gridish , Hanan Shumacher , Vadim Balakhovski , Juan Jose Vegas Olmos
CPC classification number: H01S5/423 , H01S5/0014 , H01S5/0042 , H01S5/0261 , H01S5/18302
Abstract: A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.
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