Device for damping vibrations in projection exposure apparatuses for semiconductor lithography
    1.
    发明授权
    Device for damping vibrations in projection exposure apparatuses for semiconductor lithography 有权
    用于半导体光刻的投影曝光装置中用于阻尼振动的装置

    公开(公告)号:US08212992B2

    公开(公告)日:2012-07-03

    申请号:US13045697

    申请日:2011-03-11

    CPC classification number: G03F7/709 G03F7/70825 G03F7/7085

    Abstract: A changeable assembly for a projection exposure apparatus for semiconductor lithography contains at least one damping element. Projection exposure apparatus for semiconductor lithography and measuring assemblies for a projection exposure apparatus for semiconductor lithography can include at least one sensor for detecting parameters and vibrations of the projection exposure apparatus, wherein the measuring assembly is embodied in such a way that it can be inserted into an exchange opening, provided for an optical element, in the projection exposure apparatus.

    Abstract translation: 用于半导体光刻的投影曝光装置的可变组件包含至少一个阻尼元件。 用于半导体光刻的投影曝光装置和用于半导体光刻的投影曝光装置的测量组件可以包括用于检测投影曝光装置的参数和振动的至少一个传感器,其中测量组件以这样一种方式被实现: 在投影曝光装置中设置有用于光学元件的交换开口。

    DEVICE FOR DAMPING VIBRATIONS IN PROJECTION EXPOSURE APPARATUSES FOR SEMICONDUCTOR LITHOGRAPHY
    2.
    发明申请
    DEVICE FOR DAMPING VIBRATIONS IN PROJECTION EXPOSURE APPARATUSES FOR SEMICONDUCTOR LITHOGRAPHY 有权
    用于半导体层析的投影曝光装置中的阻尼振动装置

    公开(公告)号:US20110205507A1

    公开(公告)日:2011-08-25

    申请号:US13045697

    申请日:2011-03-11

    CPC classification number: G03F7/709 G03F7/70825 G03F7/7085

    Abstract: A changeable assembly for a projection exposure apparatus for semiconductor lithography contains at least one damping element. Projection exposure apparatus for semiconductor lithography and measuring assemblies for a projection exposure apparatus for semiconductor lithography can include at least one sensor for detecting parameters and vibrations of the projection exposure apparatus, wherein the measuring assembly is embodied in such a way that it can be inserted into an exchange opening, provided for an optical element, in the projection exposure apparatus.

    Abstract translation: 用于半导体光刻的投影曝光装置的可变组件包含至少一个阻尼元件。 用于半导体光刻的投影曝光装置和用于半导体光刻的投影曝光装置的测量组件可以包括用于检测投影曝光装置的参数和振动的至少一个传感器,其中测量组件以这样一种方式被实现: 在投影曝光装置中设置有用于光学元件的交换开口。

    FACETED MIRROR APPARATUS
    7.
    发明申请
    FACETED MIRROR APPARATUS 审中-公开
    镜面装置

    公开(公告)号:US20070206301A1

    公开(公告)日:2007-09-06

    申请号:US11695626

    申请日:2007-04-03

    Abstract: In a method for the production of a facetted mirror 24 having a plurality of mirror facets 12 and 12′, which have mirror surfaces 15 and are fitted into reception bores 22, 22′ of a support plate 16, the mirror facets 12, 12′ are made in a first method step. At least one of the mirror facets is fitted into the associated reception bore of the support plate in a second method step, after which the ACTUAL position of the optical axis of at least one mirror surface of an associated mirror facet 12, 12′ fitted into the support plate is respectively determined in a third step and compared with a SET position of a predetermined optical axis. Knowing the measured values determined for the at least one mirror facet 12, 12′ in the third method step, reprocessing of the mirror facet and/or of the reception bore is subsequently carried out in a further method step if there is an angular deviation between the ACTUAL position and the SET position.

    Abstract translation: 在制造具有多个镜面12和12'的分面镜24的方法中,其具有镜面15并被装配到支撑板16的接收孔22,22'中,镜面12,12' 在第一方法步骤中制成。 在第二方法步骤中,至少一个镜面被安装到支撑板的相关联的接收孔中,之后将相关镜面12,12'的至少一个镜面的光轴的ACTUAL位置嵌入 分别在第三步骤中确定支撑板并与预定光轴的SET位置进行比较。 了解在第三方法步骤中对于至少一个镜面12,12'确定的测量值,随后在另外的方法步骤中进行镜面和/或接收孔的再处理,如果在第二方法步骤之间存在角度偏差 ACTUAL位置和SET位置。

    EUV illumination system with a system for measuring fluctuations of the light source
    10.
    发明授权
    EUV illumination system with a system for measuring fluctuations of the light source 有权
    EUV照明系统具有用于测量光源波动的系统

    公开(公告)号:US07875865B2

    公开(公告)日:2011-01-25

    申请号:US12098739

    申请日:2008-04-07

    Abstract: The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor.

    Abstract translation: 本公开涉及EUV(极紫外)照明系统。 该系统可以包括至少一个EUV光源,以及用于测量EUV光源的强度波动和/或位置变化的孔径光阑和传感器装置,特别是在有效使用的波长的范围内,或者 EUV光源的中间图像。 孔径光阑和传感器装置可以包括孔径光阑和EUV位置传感器。 孔径光阑和传感器装置可以以这样的方式布置,使得孔径光阑允许源自EUV光源或其中间图像之一的辐射的特定立体角范围落在EUV位置传感器上。

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