Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
A Low-Density Parity-Check (LDPC) decoder and a method for LDPC decoding are provided. The LDPC decoder receives a soft-decision input codeword block in which the probability of a bit being a “0” or a “1” is represented as a log-likelihood ratio (LLR). During LDPC decoding, a sequence of hardware logic units iteratively updates the soft-decision input codeword block until a valid codeword is found or a maximum number of decoding iterations is reached. Each hardware logic unit comprises a check node (CN) update logic unit and a variable node (VN) update logic unit. The CN update logic units are coupled via a closed CN path, and the VN update logic units are coupled via a closed VN path. Aspects of this LDPC decoder alleviate the global routing and energy efficiency challenges of traditional LDPC decoders, to enable multi-rate, multi-Gb/s decoding without compromising error correction performance in next-generation systems and future CMOS technology nodes.
Abstract:
A Low-Density Parity-Check (LDPC) decoder and a method for LDPC decoding are provided. The LDPC decoder receives a soft-decision input codeword block in which the probability of a bit being a “0” or a “1” is represented as a log-likelihood ratio (LLR). During LDPC decoding, a sequence of hardware logic units iteratively updates the soft-decision input codeword block until a valid codeword is found or a maximum number of decoding iterations is reached. Each hardware logic unit comprises a check node (CN) update logic unit and a variable node (VN) update logic unit. The CN update logic units are coupled via a closed CN path, and the VN update logic units are coupled via a closed VN path. Aspects of this LDPC decoder alleviate the global routing and energy efficiency challenges of traditional LDPC decoders, to enable multi-rate, multi-Gb/s decoding without compromising error correction performance in next-generation systems and future CMOS technology nodes.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
An approach for Soft-output K-Best MIMO detection comprises computing an estimated symbol vector and Log-Likelihood Ratio (LLR) values for transmitted bits. The approach includes a relevant discarded paths selection process, a last-stage on-demand expansion process, and a relaxed LLR computation process. The relevant discarded paths selection process includes analyzing the K-Best paths and discarded paths at each intermediate tree level and selecting only those discarded paths for further processing that will help in LLR computation for at least one of the transmitted bits. The last-stage on-demand expansion process includes expanding K paths at the tree level 2NT−1 (NT=number of transmit antennas) on-demand to only 2K−1 lowest Partial Euclidean Distance (PED) paths at last tree level 2NT. The relaxed LLR computation scheme includes approximating LLR computations by assuming that discarded path PED is greater than or equal K-Best path PED.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.
Abstract:
A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.