公开(公告)号：US20140008653A1

公开(公告)日：2014-01-09

申请号：US14020908

申请日：2013-09-09

Applicant: Maxchip Electronics Corp.

Inventor： Jin-Wei Chang ,  Hung-Lung Wang ,  Jung-Kai Hung

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  G01J1/02 ,  G01J1/029 ,  G01J1/08 ,  G01J1/4204 ,  G01J1/4228 ,  G01J3/36 ,  G01J5/0846 ,  H01L27/1443 ,  H01L27/14621 ,  H01L27/14652

Abstract: Provided is a multi-wave band light sensor combined with a function of infrared ray (IR) sensing including a substrate, an IR sensing structure, a dielectric layer, and a multi-wave band light sensing structure. The substrate includes a first region and a second region. The IR sensing structure is in the substrate for sensing IR. The dielectric layer is on the IR sensing structure. The multi-wave band light sensing structure includes a first wave band light sensor, a second wave band light sensor, and a third wave band light sensor. The second wave band light sensor and the first wave band light sensor are overlapped and disposed on the IR sensing structure on the first region of the substrate from the bottom up. The third wave band light sensor is in the dielectric layer of the second region.

Abstract translation: 提供了与包括基板，IR感测结构，电介质层和多波段光感测结构的红外线（IR）感测功能相结合的多波段光束传感器。 衬底包括第一区域和第二区域。 IR感测结构位于用于感测IR的基板中。 电介质层位于IR感测结构上。 多波段光束感测结构包括第一波段光传感器，第二波段光传感器和第三波段光传感器。 第二波段光传感器和第一波段光传感器从底部向上叠置并设置在基板的第一区域上的IR感测结构上。 第三波段光传感器位于第二区域的介质层中。

公开(公告)号：US09142583B2

公开(公告)日：2015-09-22

申请号：US14089769

申请日：2013-11-26

Applicant: Maxchip Electronics Corp.

Inventor： Jin-Wei Chang ,  Hung-Lung Wang ,  Jung-Kai Hung ,  Wei-Chi Su

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1463 ,  H01L27/1443 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14647 ,  H01L27/14652

Abstract: Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels.

Abstract translation: 提供一种光传感器，其包括基板，电介质层，多个像素，多个间隔物和多个金属互连。 电介质层位于衬底上。 像素位于电介质层中。 间隔物位于相邻像素之间的开口的侧壁上。 金属互连件位于开口中并且覆盖间隔件以便电连接到相应的像素。

公开(公告)号：US20150091123A1

公开(公告)日：2015-04-02

申请号：US14089769

申请日：2013-11-26

Applicant: Maxchip Electronics Corp.

Inventor： Jin-Wei Chang ,  Hung-Lung Wang ,  Jung-Kai Hung ,  Wei-Chi Su

IPC: H01L27/144 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1443 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14647 ,  H01L27/14652

Abstract: Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels.

Abstract translation: 提供一种光传感器，其包括基板，电介质层，多个像素，多个间隔物和多个金属互连。 电介质层位于衬底上。 像素位于电介质层中。 间隔物位于相邻像素之间的开口的侧壁上。 金属互连件位于开口中并且覆盖间隔件以便电连接到相应的像素。

公开(公告)号：US09136301B2

公开(公告)日：2015-09-15

申请号：US14020908

申请日：2013-09-09

Applicant: Maxchip Electronics Corp.

Inventor： Jin-Wei Chang ,  Hung-Lung Wang ,  Jung-Kai Hung

IPC: H01L27/14 ,  H01L27/146 ,  G01J1/02 ,  G01J1/08 ,  G01J1/42 ,  H01L27/144 ,  G01J3/36 ,  G01J5/08

CPC classification number: H01L27/14649 ,  G01J1/02 ,  G01J1/029 ,  G01J1/08 ,  G01J1/4204 ,  G01J1/4228 ,  G01J3/36 ,  G01J5/0846 ,  H01L27/1443 ,  H01L27/14621 ,  H01L27/14652

Abstract: Provided is a multi-wave band light sensor combined with a function of infrared ray (IR) sensing including a substrate, an IR sensing structure, a dielectric layer, and a multi-wave band light sensing structure. The substrate includes a first region and a second region. The IR sensing structure is in the substrate for sensing IR. The dielectric layer is on the IR sensing structure. The multi-wave band light sensing structure includes a first wave band light sensor, a second wave band light sensor, and a third wave band light sensor. The second wave band light sensor and the first wave band light sensor are overlapped and disposed on the IR sensing structure on the first region of the substrate from the bottom up. The third wave band light sensor is in the dielectric layer of the second region.

Abstract translation: 提供了与包括基板，IR感测结构，电介质层和多波段光感测结构的红外线（IR）感测功能相结合的多波段光束传感器。 衬底包括第一区域和第二区域。 IR感测结构位于用于感测IR的基板中。 电介质层位于IR感测结构上。 多波段光束感测结构包括第一波段光传感器，第二波段光传感器和第三波段光传感器。 第二波段光传感器和第一波段光传感器从底部向上叠置并设置在基板的第一区域上的IR感测结构上。 第三波段光传感器位于第二区域的介质层中。