Semiconductor package structure
    3.
    发明授权

    公开(公告)号:US12300679B2

    公开(公告)日:2025-05-13

    申请号:US17739295

    申请日:2022-05-09

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor die, and a first capacitor. The substrate has a wiring structure. The redistribution layer is disposed over the substrate. The first semiconductor die is disposed over the redistribution layer. The first capacitor is disposed in the substrate and is electrically coupled to the first semiconductor die. The first capacitor includes a first capacitor substrate, a plurality of first capacitor cells, and a first through via. The first capacitor substrate has a first top surface and a first bottom surface. The first capacitor cells are disposed in the first capacitor substrate. The first through via is disposed in the first capacitor substrate and electrically couples the first capacitor cells to the wiring structure on the first top surface and the first bottom surface.

    Semiconductor package structure
    4.
    发明授权

    公开(公告)号:US11710688B2

    公开(公告)日:2023-07-25

    申请号:US17363459

    申请日:2021-06-30

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a frontside redistribution layer, a stacking structure, a backside redistribution layer, a first intellectual property (IP) core, and a second IP core. The stacking structure is disposed over the frontside redistribution layer and comprises a first semiconductor die and a second semiconductor die over the first semiconductor die. The backside redistribution layer is disposed over the stacking structure. The first IP core is disposed in the stacking structure and is electrically coupled to the frontside redistribution layer through a first routing channel. The second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is separated from the first routing channel and electrically insulated from the frontside redistribution layer.

    Ball pad design for semiconductor packages

    公开(公告)号:US12021013B2

    公开(公告)日:2024-06-25

    申请号:US17547127

    申请日:2021-12-09

    Applicant: MEDIATEK INC.

    CPC classification number: H01L23/49816 H01L23/3128 H01L23/3171 H01L23/49822

    Abstract: A semiconductor structure includes a semiconductor die having an active surface, a passivation layer covering the active surface of the semiconductor die, and a post-passivation interconnect (PPI) layer disposed over the passivation layer. The PPI layer includes a ball pad having a first diameter. A polymer layer covers a perimeter of the ball pad. An under-bump-metallurgy (UBM) layer is disposed on the ball pad. The UBM layer has a second diameter that is greater than the first diameter of the ball pad. A solder ball is mounted on the UBM layer.

    BALL PAD DESIGN FOR SEMICONDUCTOR PACKAGES

    公开(公告)号:US20220246508A1

    公开(公告)日:2022-08-04

    申请号:US17547127

    申请日:2021-12-09

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor structure includes a semiconductor die having an active surface, a passivation layer covering the active surface of the semiconductor die, and a post-passivation interconnect (PPI) layer disposed over the passivation layer. The PPI layer includes a ball pad having a first diameter. A polymer layer covers a perimeter of the ball pad. An under-bump-metallurgy (UBM) layer is disposed on the ball pad. The UBM layer has a second diameter that is greater than the first diameter of the ball pad. A solder ball is mounted on the UBM layer.

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