公开(公告)号：US20210005455A1

公开(公告)日：2021-01-07

申请号：US16459079

申请日：2019-07-01

Applicant: Micron Technology, Inc.

Inventor： Yiping Wang ,  Caizhi Xu ,  Pengyuan Zheng ,  Ying Rui ,  Russell A. Benson ,  Yongjun J. Hu ,  Jaydeb Goswami

IPC: H01L21/033 ,  H01L21/308 ,  H01L27/108

Abstract: Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.

公开(公告)号：US11011378B2

公开(公告)日：2021-05-18

申请号：US16459079

申请日：2019-07-01

Applicant: Micron Technology, Inc.

Inventor： Yiping Wang ,  Caizhi Xu ,  Pengyuan Zheng ,  Ying Rui ,  Russell A. Benson ,  Yongjun J. Hu ,  Jaydeb Goswami

IPC: H01L21/033 ,  H01L27/108 ,  H01L21/308

Abstract: Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.