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    METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
    1.
    发明申请
    METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS 有权

    公开(公告)号：US20220059469A1

    公开(公告)日：2022-02-24

    申请号：US16999817

    申请日：2020-08-21

    Applicant: Micron Technology, Inc.

    Inventor： Russell A. Benson ,  Davide Colombo ,  Yan Li ,  Terrence B. McDaniel ,  Vinay Nair ,  Silvia Borsari

    IPC: H01L23/552 ,  H01L27/108

    Abstract: A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

    Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
    4.
    发明授权
    Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems 有权

    公开(公告)号：US11257766B1

    公开(公告)日：2022-02-22

    申请号：US16999817

    申请日：2020-08-21

    Applicant: Micron Technology, Inc.

    Inventor： Russell A. Benson ,  Davide Colombo ,  Yan Li ,  Terrence B. McDaniel ,  Vinay Nair ,  Silvia Borsari

    IPC: H01L23/552 ,  H01L27/108

    Abstract: A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

    MEMORY CELLS HAVING A NUMBER OF CONDUCTIVE DIFFUSION BARRIER MATERIALS AND MANUFACTURING METHODS
    5.
    发明申请
    MEMORY CELLS HAVING A NUMBER OF CONDUCTIVE DIFFUSION BARRIER MATERIALS AND MANUFACTURING METHODS 有权
    具有多个导电扩散阻挡材料和制造方法的存储器电池

    公开(公告)号：US20150349249A1

    公开(公告)日：2015-12-03

    申请号：US14824128

    申请日：2015-08-12

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Gotti ,  F. Daniel Gealy ,  Davide Colombo

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/12 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608

    Abstract: Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

    Abstract translation: 具有位于第一电极和第二电极之间的选择器件材料的存储器单元，位于第二电极和第三电极之间的存储元件以及位于存储元件的第一部分和第二电极之间的多个导电扩散阻挡材料 存储元件的一部分。 具有选择装置的存储单元包括位于第一电极和第二电极之间的选择装置材料，位于第二电极和第三电极之间的存储元件以及位于选择器的第一部分之间的多个导电扩散阻挡材料 设备和选择设备的第二部分。 还描述了制造方法。

    Methods used in the fabrication of integrated circuitry
    7.
    发明授权
    Methods used in the fabrication of integrated circuitry 有权

    公开(公告)号：US10971500B2

    公开(公告)日：2021-04-06

    申请号：US16433966

    申请日：2019-06-06

    Applicant: Micron Technology, Inc.

    Inventor： Ying Rui ,  Tong Liu ,  Yi Fang Lee ,  Davide Colombo ,  Silvia Borsari ,  Austin Johnson

    IPC: H01L27/108 ,  H01L49/02 ,  H01L21/768 ,  H01L27/11502

    Abstract: A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

    Apparatuses comprising protective material along surfaces of tungsten-containing structures
    8.
    发明授权
    Apparatuses comprising protective material along surfaces of tungsten-containing structures 有权

    公开(公告)号：US10892224B2

    公开(公告)日：2021-01-12

    申请号：US15904683

    申请日：2018-02-26

    Applicant: Micron Technology, Inc.

    Inventor： Luca Fumagalli ,  Davide Colombo

    IPC: H01L23/52 ,  H01L23/532 ,  H01L23/528 ,  H01L27/108 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02

    Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

    Memory cells having a number of conductive diffusion barrier materials and manufacturing methods
    9.
    发明授权
    Memory cells having a number of conductive diffusion barrier materials and manufacturing methods 有权

    公开(公告)号：US10290800B2

    公开(公告)日：2019-05-14

    申请号：US15635945

    申请日：2017-06-28

    Applicant: Micron Technology, Inc.

    Inventor： Andrea Gotti ,  F. Daniel Gealy ,  Davide Colombo

    IPC: H01L45/00 ,  H01L27/24

    Abstract: Memory cells having a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the memory element and a second portion of the memory element. Memory cells having a select device comprising a select device material located between a first electrode and a second electrode, a memory element located between the second electrode and a third electrode, and a number of conductive diffusion barrier materials located between a first portion of the select device and a second portion of the select device. Manufacturing methods are also described.

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