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    Gate stacks
    1.
    发明授权
    Gate stacks 有权

    公开(公告)号：US10777651B2

    公开(公告)日：2020-09-15

    申请号：US16201624

    申请日：2018-11-27

    Applicant: Micron Technology, Inc.

    Inventor： Yushi Hu ,  John Mark Meldrim ,  Eric Blomiley ,  Everett Allen McTeer ,  Matthew J. King

    IPC: H01L29/49 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

    Abstract: Some embodiments disclose a gate stack having a gate (e.g., polysilicon (poly) material) horizontally between shallow trench isolations (STIs), a tungsten silicide (WSix) material over the gate and the STIs, and a tungsten silicon nitride (WSiN) material on a top surface of the WSix material. Some embodiments disclose a gate stack having a gate between STIs, a first WSix material over the gate and the STIs, a WSiN interlayer material on a top surface of the first WSix material, and a second WSix material on a top surface of the WSiN interlayer material. Additional embodiments are disclosed.

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    3.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 审中-公开

    公开(公告)号：US20190088867A9

    公开(公告)日：2019-03-21

    申请号：US15882666

    申请日：2018-01-29

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall

    Phase change memory stack with treated sidewalls
    4.
    发明授权
    Phase change memory stack with treated sidewalls 有权
    具有处理侧壁的相变存储器堆叠

    公开(公告)号：US09281471B2

    公开(公告)日：2016-03-08

    申请号：US14266365

    申请日：2014-04-30

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/165 ,  H01L45/1675

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    Abstract translation: 已经公开了用于制造存储器件的存储器件和方法。 一种这样的存储器件包括形成在字线材料上的第一电极材料。 在第一电极材料上形成选择器装置材料。 第二电极材料形成在选择器装置材料上。 在第二电极材料上形成相变材料。 在相变材料上形成第三电极材料。 粘附物质是等离子体掺杂到存储器堆叠的侧壁中，并且衬垫材料形成在存储器堆叠的侧壁上。 粘附物质与存储器堆叠和侧壁衬套的元件混合以终止元件和侧壁衬套的不满足的原子键。

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    9.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 审中-公开

    公开(公告)号：US20190355902A1

    公开(公告)日：2019-11-21

    申请号：US16266777

    申请日：2019-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

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