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公开(公告)号：US20140281686A1
公开(公告)日：2014-09-18
申请号：US13804071
申请日：2013-03-14
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
IPC: G06F11/10
CPC classification number: G06F11/2094 , G06F11/0751 , G06F11/10 , G06F11/1008 , G06F11/1048 , G06F2201/85 , G11C29/70 , G11C2029/0401 , G11C2029/0409 , G11C2029/0411 , G11C2029/4402
Abstract: Some embodiments include apparatuses and methods having a memory structure included in a memory device and a control unit included in the memory device. The control unit can provide information obtained from the memory structure during a memory operation to a host device (e.g., a processor) in response to a command from the host device. If the control unit receives a notification from the host device indicating that the host device has detected an error in the information obtained from the memory structure, then a repair unit included in the memory device performs a memory repair operation to repair a portion in the memory structure.
Abstract translation: 一些实施例包括具有包括在存储器件中的存储器结构的装置和方法以及包括在存储器件中的控制单元。 响应于来自主机设备的命令，控制单元可以在存储器操作期间从存储器结构获得的信息提供给主机设备（例如，处理器）。 如果控制单元从主机设备接收到指示主机设备已经从存储器结构获得的信息中检测到错误的通知，则存储器件中包括的修复单元执行存储器修复操作以修复存储器中的一部分 结构体。
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公开(公告)号：US20180316465A1
公开(公告)日：2018-11-01
申请号：US16028133
申请日：2018-07-05
Applicant: Micron Technology, Inc.
Inventor： Marlon Gunderson , Kurt Ware
Abstract: Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.
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公开(公告)号：US20160149674A1
公开(公告)日：2016-05-26
申请号：US15012519
申请日：2016-02-01
Applicant: Micron Technology, Inc.
Inventor： Marlon Gunderson , Kurt Ware
CPC classification number: H04L1/24 , H04L25/028 , H04L25/0292 , H04L25/4908
Abstract: Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.
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公开(公告)号：US20150355986A1
公开(公告)日：2015-12-10
申请号：US14832559
申请日：2015-08-21
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
IPC: G06F11/20
CPC classification number: G06F11/2094 , G06F11/0751 , G06F11/10 , G06F11/1008 , G06F11/1048 , G06F2201/85 , G11C29/70 , G11C2029/0401 , G11C2029/0409 , G11C2029/0411 , G11C2029/4402
Abstract: Some embodiments include apparatuses and methods having a memory structure included in a memory device and a control unit included in the memory device. The control unit can provide information obtained from the memory structure during a memory operation to a host device (e.g., a processor) in response to a command from the host device. If the control unit receives a notification from the host device indicating that the host device has detected an error in the information obtained from the memory structure, then a repair unit included in the memory device performs a memory repair operation to repair a portion in the memory structure.
Abstract translation: 一些实施例包括具有包括在存储器件中的存储器结构的装置和方法以及包括在存储器件中的控制单元。 响应于来自主机设备的命令，控制单元可以在存储器操作期间从存储器结构获得的信息提供给主机设备（例如，处理器）。 如果控制单元从主机设备接收到指示主机设备已经从存储器结构获得的信息中检测到错误的通知，则存储器件中包括的修复单元执行存储器修复操作以修复存储器中的一部分 结构体。
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公开(公告)号：US20200169361A1
公开(公告)日：2020-05-28
申请号：US16776027
申请日：2020-01-29
Applicant: Micron Technology, Inc.
Inventor： Marlon Gunderson , Kurt Ware
Abstract: Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.
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Patent Agency Ranking
公开(公告)号：US10554349B2
公开(公告)日：2020-02-04
申请号：US16028133
申请日：2018-07-05
Applicant: Micron Technology, Inc.
Inventor： Marlon Gunderson , Kurt Ware
Abstract: Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.
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公开(公告)号：US09734029B2
公开(公告)日：2017-08-15
申请号：US14832559
申请日：2015-08-21
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
CPC classification number: G06F11/2094 , G06F11/0751 , G06F11/10 , G06F11/1008 , G06F11/1048 , G06F2201/85 , G11C29/70 , G11C2029/0401 , G11C2029/0409 , G11C2029/0411 , G11C2029/4402
Abstract: Some embodiments include apparatuses and methods having a memory structure included in a memory device and a control unit included in the memory device. The control unit can provide information obtained from the memory structure during a memory operation to a host device (e.g., a processor) in response to a command from the host device. If the control unit receives a notification from the host device indicating that the host device has detected an error in the information obtained from the memory structure, then a repair unit included in the memory device performs a memory repair operation to repair a portion in the memory structure.
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公开(公告)号：US09135100B2
公开(公告)日：2015-09-15
申请号：US13804071
申请日：2013-03-14
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
CPC classification number: G06F11/2094 , G06F11/0751 , G06F11/10 , G06F11/1008 , G06F11/1048 , G06F2201/85 , G11C29/70 , G11C2029/0401 , G11C2029/0409 , G11C2029/0411 , G11C2029/4402
Abstract: Some embodiments include apparatuses and methods having a memory structure included in a memory device and a control unit included in the memory device. The control unit can provide information obtained from the memory structure during a memory operation to a host device (e.g., a processor) in response to a command from the host device. If the control unit receives a notification from the host device indicating that the host device has detected an error in the information obtained from the memory structure, then a repair unit included in the memory device performs a memory repair operation to repair a portion in the memory structure.
Abstract translation: 一些实施例包括具有包括在存储器件中的存储器结构的装置和方法以及包括在存储器件中的控制单元。 响应于来自主机设备的命令，控制单元可以在存储器操作期间从存储器结构获得的信息提供给主机设备（例如，处理器）。 如果控制单元从主机设备接收到指示主机设备已经从存储器结构获得的信息中检测到错误的通知，则存储器件中包括的修复单元执行存储器修复操作以修复存储器中的一部分 结构体。
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公开(公告)号：US08756481B2
公开(公告)日：2014-06-17
申请号：US13757358
申请日：2013-02-01
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
IPC: H03M13/00
CPC classification number: G06F11/1072 , G11C7/16 , G11C11/5621 , G11C29/00
Abstract: Memory, modules and methods for using error detection with multi-level memory cells where the number of storage levels of the memory cells is an integer power of a non-binary prime number are provided. Additional circuit and methods are disclosed.
Abstract translation: 提供了使用存储器单元的存储级数为非二进制素数的整数倍的多级存储器单元进行错误检测的存储器，模块和方法。 公开了附加的电路和方法。
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公开(公告)号：US20130151931A1
公开(公告)日：2013-06-13
申请号：US13757358
申请日：2013-02-01
Applicant: Micron Technology, Inc.
Inventor： Kurt Ware
IPC: G06F11/10
CPC classification number: G06F11/1072 , G11C7/16 , G11C11/5621 , G11C29/00
Abstract: Memory, modules and methods for using error detection with multi-level memory cells where the number of storage levels of the memory cells is an integer power of a non-binary prime number are provided. Additional circuit and methods are disclosed.
Abstract translation: 提供了用于使用存储器单元的存储级数为非二进制素数的整数倍的多级存储器单元进行错误检测的存储器，模块和方法。 公开了附加的电路和方法。
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