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公开(公告)号：US12210774B2
公开(公告)日：2025-01-28
申请号：US17677568
申请日：2022-02-22
Applicant: Micron Technology, Inc.
Inventor： Peter Mayer , Michael Dieter Richter , Martin Brox , Wolfgang Anton Spirkl , Thomas Hein
IPC: G06F3/06 , G11C11/22 , G11C11/4072 , G11C11/4074 , G11C11/4096
Abstract: Methods, systems, and devices for controlled and mode-dependent heating of a memory device are described. In various examples, a memory device or an apparatus that includes a memory device may have circuitry configured to heat the memory device. The circuitry configured to heat the memory device may be activated, deactivated, or otherwise operated based on an indication of a temperature (e.g., of the memory device). In some examples, activating or otherwise operating the circuitry configured to heat the memory device may be based on an operating mode (e.g., of the memory device), which may be associated with certain access operations or operational states (e.g., of the memory device). Various operations or operating modes (e.g., of the memory device) may also be based on indications of a temperature (e.g., of the memory device).
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公开(公告)号：US20250022506A1
公开(公告)日：2025-01-16
申请号：US18763964
申请日：2024-07-03
Applicant: Micron Technology, Inc.
Inventor： Milena Tsvetkova Ivanov , Stefanie Christina Granato , Jun Tan , Varsha Mohan , Manfred Hans Plan , Martin Brox , Morshed Mohammed , Yu Ting Wu , Juan Antonio Garrido Ocon
IPC: G11C11/4096 , G11C11/4076 , G11C11/408
Abstract: Methods, systems, and devices implementing self-timing read termination are described. A memory system may perform a read operation in which the memory system generates a first signal and a second signal to couple a first sense component and a second sense component with a global access line, respectively. The first sense component may be coupled with one or more memory cells via an access line, and the second sense component may be configured to determine one or more logic values of the one or more memory cells based on the coupling with the global access line. The memory system may support a self-timed termination of the first signal to decouple the first sense component from the global access line. The memory system may generate a third signal to terminate the first signal based on determining the one or more logic values.
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公开(公告)号：US20240240995A1
公开(公告)日：2024-07-18
申请号：US18404610
申请日：2024-01-04
Applicant: Micron Technology, Inc.
Inventor： Luiza Souza Correa , Julius Löckemann , Elena Cabrera Bernal , Martin Brox , Jun Tan
Abstract: Methods, systems, and devices for temperature sensor linearization techniques are described. A temperature sensor associated with a semiconductor device may include a first circuit and a second circuit. The second circuit may be configured to determine that a first temperature, associated with the semiconductor device and indicated by one or more first bits generated by the first circuit, is within a first temperature range of a total temperature range measurable by the temperature sensor. The second circuit may be configured to generate and output, based on the first temperature being within the first temperature range, one or more second bits indicating a second temperature associated with the semiconductor device. The second circuit may generate the one or more second bits by applying, to the one or more first bits, a first-order operation corresponding to the first temperature range and associated with correcting an error of the first temperature.
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公开(公告)号：US11601215B2
公开(公告)日：2023-03-07
申请号：US17149196
申请日：2021-01-14
Applicant: Micron Technology, Inc.
Inventor： Stefan Dietrich , Thomas Hein , Natalija Jovanovic , Ronny Schneider , Michael Dieter Richter , Martin Brox
IPC: H04L1/00
Abstract: Methods, systems, and devices for data inversion techniques are described to enable a memory device to transmit or receive a multi-symbol signal that includes more than two (2) physical levels. Some portions of some multi-symbol signals may be inverted. A transmitting device may determine to invert one or more data symbols based on one or more parameters. A receiving device may determine that one or more data symbols are inverted and may re-invert the one or more data symbols (e.g., to an original value). When receiving or transmitting a multi-symbol signal, a device may invert or re-invert a data symbol by changing a value of one bit of the data symbol. Additionally or alternatively, a device may invert or re-invert a data symbol of a multi-symbol signal by inverting a physical level of the signal across an axis located between or associated with one or more physical levels.
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公开(公告)号：US20230030776A1
公开(公告)日：2023-02-02
申请号：US17963367
申请日：2022-10-11
Applicant: Micron Technology, Inc.
Inventor： Michael Dieter Richter , Thomas Hein , Wolfgang Anton Spirkl , Martin Brox , Peter Mayer
Abstract: Methods, systems, and devices for error detection, error correction, and error management by memory devices are described. Programmable thresholds may be configured for a memory device based on a type of data or a location of stored data, among other aspects. For example, a host device may configure a threshold quantity of errors for data at a memory device. When retrieving the data, the memory device may track or count errors in the data and determine whether the threshold has been satisfied. The memory device may transmit (e.g., to the host device) an indication whether the threshold has been satisfied, and the system may perform functions to correct the errors and/or prevent further errors. The memory device may also identify errors in received commands or may identify errors introduced in data after the data was received (e.g., using an error detecting code associated with a command or bus).
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Patent Agency Ranking
公开(公告)号：US20230013927A1
公开(公告)日：2023-01-19
申请号：US17879512
申请日：2022-08-02
Applicant: Micron Technology, Inc.
Inventor： Martin Brox , Thomas Hein
IPC: G06F1/3234 , G11C11/4074
Abstract: Methods, systems, and devices for multi-voltage operation for driving a multi-mode channel are described. A transmitting device and a receiving device may be coupled via a channel, and the channel may support multiple modes such as a terminated mode and an unterminated mode. A driver may be coupled with the channel, and a voltage supply for the driver may be adjusted based on the mode of the channel, such as based on whether the channel is terminated or unterminated. Adjusting the voltage supply may result in similar or otherwise desirable voltage levels on the channel for each mode of the channel.
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公开(公告)号：US11443779B2
公开(公告)日：2022-09-13
申请号：US17241876
申请日：2021-04-27
Applicant: Micron Technology, Inc.
Inventor： Peter Mayer , Wolfgang Anton Spirkl , Michael Dieter Richter , Martin Brox , Thomas Hein
Abstract: Methods, systems, and devices for drive strength calibration for multi-level signaling are described. A driver may be configured to have an initial drive strength and to drive an output pin of a transmitting device toward an intermediate voltage level of a multi-level modulation scheme, where the output pin is coupled with a receiving device via a channel. The receiving device may generate, and the transmitting device may receive, a feedback signal indicating a relationship between the resulting voltage of the channel and an value for the intermediate voltage level. The transmitting device may determine and configure the driver to use an adjusted drive strength for the intermediate voltage level based on the feedback signal. The driver may be calibrated (e.g., independently) for each intermediate voltage level of the multi-level modulation scheme. Further, the driver may be calibrated for the associated channel.
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公开(公告)号：US11437112B2
公开(公告)日：2022-09-06
申请号：US16681587
申请日：2019-11-12
Applicant: Micron Technology, Inc.
Inventor： Wolfgang Anton Spirkl , Michael Dieter Richter , Thomas Hein , Peter Mayer , Martin Brox
Abstract: Methods, systems, and devices for testing of multi-level signaling associated with a memory device are described. A tester may be used to test one or more operations of a memory device. The memory device may be configured to communicate data using a modulation scheme that includes three or more symbols. The tester may be configured to communicate data using a modulation scheme that includes three or fewer symbols. Techniques for testing the memory device using such a tester are described.
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公开(公告)号：US11437086B2
公开(公告)日：2022-09-06
申请号：US17374349
申请日：2021-07-13
Applicant: Micron Technology, inc.
Inventor： Martin Brox , Maksim Kuzmenka
IPC: G11C11/4076 , H03K3/017 , G11C11/402
Abstract: Methods, systems, and devices for phase clock correction are described. The clock correction may, in some examples, include two stages of duty cycle adjustment. In a first stage, the duty cycles of multiple clock signals may be adjusted. These clock signals may be based on an input clock signal and its complement. The duty cycle adjustment provided to a clock signal during this stage may be based on a difference between the duty cycle of the clock signal before adjustment and the duty cycle of another clock signal. In the second stage, the duty cycle of the input clock signal and its complement may be adjusted. The duty cycle adjustment provided to the input clock signal and/or its complement may be based on clock signals generated from the multiple clock signals after their duty cycles have been adjusted.
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公开(公告)号：US11409354B2
公开(公告)日：2022-08-09
申请号：US16849746
申请日：2020-04-15
Applicant: Micron Technology, Inc.
Inventor： Martin Brox , Thomas Hein
IPC: G06F1/3234 , G11C11/4074
Abstract: Methods, systems, and devices for multi-voltage operation for driving a multi-mode channel are described. A transmitting device and a receiving device may be coupled via a channel, and the channel may support multiple modes such as a terminated mode and an unterminated mode. A driver may be coupled with the channel, and a voltage supply for the driver may be adjusted based on the mode of the channel, such as based on whether the channel is terminated or unterminated. Adjusting the voltage supply may result in similar or otherwise desirable voltage levels on the channel for each mode of the channel.
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