公开(公告)号：US09046731B2

公开(公告)日：2015-06-02

申请号：US13756605

申请日：2013-02-01

Applicant: National Institute of Standards and Technology

Inventor： Henri J. Lezec ,  Erich C. Walter ,  Amit Agrawal ,  Albert Alec Talin ,  Ting Xu

IPC: G02F1/15 ,  G09G3/38 ,  G02F1/153 ,  B82Y20/00

CPC classification number: G02F1/1533 ,  B82Y20/00 ,  G02F1/15 ,  G02F2001/1515 ,  G02F2203/10 ,  G09G3/38

Abstract: Various plasmonic structures in the form of electrochromic optical switches are described which exhibit relatively high optical switching contrast. The switches generally include a collection of nanoslits formed in a thin electrically conductive film. An electrochromic material is disposed on the conductive film and along the sidewalls of the nanoslit(s).

Abstract translation: 描述了呈现相对高的光学切换对比度的电致变色光开关形式的各种等离子体结构。 开关通常包括形成在薄导电膜中的纳米晶体的集合。 电致变色材料设置在导电膜上并沿着纳米光线的侧壁。

公开(公告)号：US20130201544A1

公开(公告)日：2013-08-08

申请号：US13756605

申请日：2013-02-01

Applicant: National Institute of Standards and Technology

Inventor： Henri J. Lezec ,  Erich C. Walter ,  Amit Agrawal ,  Albert Alec Talin ,  Ting Xu

IPC: G02F1/153

CPC classification number: G02F1/1533 ,  B82Y20/00 ,  G02F1/15 ,  G02F2001/1515 ,  G02F2203/10 ,  G09G3/38

Abstract: Various plasmonic structures in the form of electrochromic optical switches are described which exhibit relatively high optical switching contrast. The switches generally include a collection of nanoslits formed in a thin electrically conductive film. An electrochromic material is disposed on the conductive film and along the sidewalls of the nanoslit(s).

Abstract translation: 描述了呈现相对高的光学切换对比度的电致变色光开关形式的各种等离子体结构。 开关通常包括形成在薄导电膜中的纳米晶体的集合。 电致变色材料设置在导电膜上并沿着纳米光线的侧壁。

公开(公告)号：US09562292B2

公开(公告)日：2017-02-07

申请号：US14269411

申请日：2014-05-05

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： Daniel V. Esposito ,  Thomas P. Moffat ,  Albert Alec Talin

IPC: C25B1/02 ,  C25B11/04 ,  C25B1/00 ,  H01G9/20

CPC classification number: C25B1/02 ,  C25B1/003 ,  C25B11/04 ,  H01G9/2045 ,  Y02E10/542 ,  Y02P70/521

Abstract: A photoactive article includes a substrate including a semiconductor to absorb light and to produce a plurality of charge carriers; a dielectric layer disposed on the substrate; a conductive member disposed on the dielectric layer and opposing the substrate such that the dielectric layer is exposed by the conductive member, the conductive member to receive a portion of the plurality of charge carriers from the substrate; and an electrolyte disposed on the dielectric layer and the conductive member. Making a photoactive article includes forming a dielectric layer on a substrate by rapid thermal oxidation, the dielectric layer comprising an oxide of a semiconductor; and forming a conductive member disposed on the dielectric layer.

Abstract translation: 光活性物品包括包含用于吸收光并产生多个电荷载体的半导体的衬底; 设置在所述基板上的电介质层; 导电构件，设置在所述电介质层上并与所述基板相对，使得所述电介质层被所述导电构件暴露，所述导电构件用于从所述衬底接收所述多个电荷载流子的一部分; 以及设置在电介质层和导电构件上的电解质。 制备光活性物品包括通过快速热氧化在基底上形成电介质层，所述电介质层包含半导体的氧化物; 以及形成设置在所述电介质层上的导电构件。