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公开(公告)号:US20130201544A1
公开(公告)日:2013-08-08
申请号:US13756605
申请日:2013-02-01
Inventor: Henri J. Lezec , Erich C. Walter , Amit Agrawal , Albert Alec Talin , Ting Xu
IPC: G02F1/153
CPC classification number: G02F1/1533 , B82Y20/00 , G02F1/15 , G02F2001/1515 , G02F2203/10 , G09G3/38
Abstract: Various plasmonic structures in the form of electrochromic optical switches are described which exhibit relatively high optical switching contrast. The switches generally include a collection of nanoslits formed in a thin electrically conductive film. An electrochromic material is disposed on the conductive film and along the sidewalls of the nanoslit(s).
Abstract translation: 描述了呈现相对高的光学切换对比度的电致变色光开关形式的各种等离子体结构。 开关通常包括形成在薄导电膜中的纳米晶体的集合。 电致变色材料设置在导电膜上并沿着纳米光线的侧壁。
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公开(公告)号:US09046731B2
公开(公告)日:2015-06-02
申请号:US13756605
申请日:2013-02-01
Inventor: Henri J. Lezec , Erich C. Walter , Amit Agrawal , Albert Alec Talin , Ting Xu
CPC classification number: G02F1/1533 , B82Y20/00 , G02F1/15 , G02F2001/1515 , G02F2203/10 , G09G3/38
Abstract: Various plasmonic structures in the form of electrochromic optical switches are described which exhibit relatively high optical switching contrast. The switches generally include a collection of nanoslits formed in a thin electrically conductive film. An electrochromic material is disposed on the conductive film and along the sidewalls of the nanoslit(s).
Abstract translation: 描述了呈现相对高的光学切换对比度的电致变色光开关形式的各种等离子体结构。 开关通常包括形成在薄导电膜中的纳米晶体的集合。 电致变色材料设置在导电膜上并沿着纳米光线的侧壁。
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