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    IMAGE SENSOR WITH OPTICAL STRUCTURE FOR FLARE REDUCTION
    1.
    发明申请
    IMAGE SENSOR WITH OPTICAL STRUCTURE FOR FLARE REDUCTION 有权

    公开(公告)号：US20250081656A1

    公开(公告)日：2025-03-06

    申请号：US18461320

    申请日：2023-09-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Bill Phan ,  Duli Mao ,  Seong Yeol Mun

    IPC: H01L27/146

    Abstract: An image sensor is described. The image sensor comprises a plurality of pixels arranged to form an active pixel array, a plurality of contact pads disposed within a peripheral region of the image sensor that surrounds the active pixel array, and an optical structure disposed within the peripheral region between the plurality of contact pads and the active pixel array. The optical structure is adapted to mitigate stray light from reaching the active pixel array.

    PIXEL LAYOUT WITH PHOTODIODE REGION PARTIALLY SURROUNDING CIRCUITRY
    3.
    发明申请
    PIXEL LAYOUT WITH PHOTODIODE REGION PARTIALLY SURROUNDING CIRCUITRY 有权

    公开(公告)号：US20220352220A1

    公开(公告)日：2022-11-03

    申请号：US17243024

    申请日：2021-04-28

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

    IPC: H01L27/146

    Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

    IMAGE SENSOR WITH PARTIALLY ENCAPSULATING ATTENUATION LAYER
    4.
    发明申请
    IMAGE SENSOR WITH PARTIALLY ENCAPSULATING ATTENUATION LAYER 有权

    公开(公告)号：US20210202554A1

    公开(公告)日：2021-07-01

    申请号：US16730137

    申请日：2019-12-30

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanliang Liu ,  Bill Phan ,  Duli Mao

    IPC: H01L27/146

    Abstract: A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer. The attenuation layer partially encapsulates the first photodiode by extending laterally from the first deep trench isolation region to the second deep trench isolation region between the semiconductor material and the buffer oxide layer.

    IMAGE SENSOR WITH SPLIT PIXEL STRUCTURE AND METHOD OF MANUFACTURING THEREOF
    5.
    发明申请
    IMAGE SENSOR WITH SPLIT PIXEL STRUCTURE AND METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20210151482A1

    公开(公告)日：2021-05-20

    申请号：US16687660

    申请日：2019-11-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Bill Phan ,  Yuanliang Liu ,  Duli Mao ,  Seong Yeol Mun ,  Alireza Bonakdar

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

    CMOS IMAGE SENSOR WITH MULTIPLE STAGE TRANSFER GATE
    6.
    发明申请
    CMOS IMAGE SENSOR WITH MULTIPLE STAGE TRANSFER GATE 审中-公开

    公开(公告)号：US20200099878A1

    公开(公告)日：2020-03-26

    申请号：US16141584

    申请日：2018-09-25

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

    IPC: H04N5/376 ,  H01L27/146 ,  H04N5/378

    Abstract: An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; and the third transfer region is proximate to the third charge storage node and configured to have a third transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential. Charges are fully transferred from the first charge storage node to the second charge storage node after a plurality of transfer signal pulses.

    Resonant-filter image sensor and associated fabrication method
    7.
    发明授权
    Resonant-filter image sensor and associated fabrication method 有权

    公开(公告)号：US10566364B2

    公开(公告)日：2020-02-18

    申请号：US16276561

    申请日：2019-02-14

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

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