LIFT printing of conductive traces onto a semiconductor substrate

    公开(公告)号:US10193004B2

    公开(公告)日:2019-01-29

    申请号:US15509491

    申请日:2015-10-19

    Applicant: Orbotech Ltd.

    Abstract: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 pm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.

    ANGLED LIFT JETTING
    2.
    发明申请
    ANGLED LIFT JETTING 审中-公开

    公开(公告)号:US20170306495A1

    公开(公告)日:2017-10-26

    申请号:US15644857

    申请日:2017-07-10

    Applicant: ORBOTECH LTD.

    Abstract: An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

    System producing a conductive path on a substrate

    公开(公告)号:US11464114B2

    公开(公告)日:2022-10-04

    申请号:US17174337

    申请日:2021-02-11

    Applicant: Orbotech Ltd.

    Abstract: A method of producing a conductive path on a substrate including depositing on the substrate a layer of material having a thickness in the range of 0.1 to 5 microns, including metal particles having a diameter in the range of 10 to 100 nanometers, employing a patterning laser beam to selectably sinter regions of the layer of material, thereby causing the metal particles to together define a conductor at sintered regions and employing an ablating laser beam, below a threshold at which the sintered regions would be ablated, to ablate portions of the layer of material other than at the sintered regions.

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