Optoelectronic semiconductor device comprising a first and a second current spreading structure

    公开(公告)号:US11715815B2

    公开(公告)日:2023-08-01

    申请号:US17053800

    申请日:2019-05-08

    CPC classification number: H01L33/14 H01L33/10 H01L33/502

    Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

    Semiconductor display, optoelectronic semiconductor component and method for the production thereof

    公开(公告)号:US11476398B2

    公开(公告)日:2022-10-18

    申请号:US16624913

    申请日:2018-06-14

    Abstract: A semiconductor display may include a multiplicity of semiconductor pillars as well as first contact strips and second electrical contact strips. The semiconductor pillars each comprise a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type, as well as an active layer between them for radiation generation. The semiconductor pillars each comprise an energization shell which is applied onto the respective semiconductor shell for energization. The semiconductor pillars can be electrically driven independently of one another individually or in small groups by means of the first and second electrical contact strips.

    Light-emitting semiconductor chip, light-emitting component and method for producing a light-emitting component

    公开(公告)号:US10672962B2

    公开(公告)日:2020-06-02

    申请号:US16091080

    申请日:2017-04-10

    Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

    LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT

    公开(公告)号:US20200343420A1

    公开(公告)日:2020-10-29

    申请号:US16769586

    申请日:2018-12-06

    Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

    Optoelectronic semiconductor component and method for producing optoelectronic semiconductor components

    公开(公告)号:US11574952B2

    公开(公告)日:2023-02-07

    申请号:US16772741

    申请日:2018-12-17

    Abstract: An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

    Textile component and method for producing a textile component

    公开(公告)号:US11473221B2

    公开(公告)日:2022-10-18

    申请号:US16766442

    申请日:2018-11-30

    Abstract: The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

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