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公开(公告)号:US12176467B2
公开(公告)日:2024-12-24
申请号:US17265475
申请日:2019-08-02
Applicant: OSRAM OLED GmbH
Inventor: Sebastian Taeger , Siegfried Herrmann , Adrian Stefan Avramescu , Alexander Behres
Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.
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公开(公告)号:US11600751B2
公开(公告)日:2023-03-07
申请号:US16769586
申请日:2018-12-06
Applicant: Osram Oled GmbH
Inventor: Adrian Stefan Avramescu , Siegfried Herrmann , Alexander Behres
Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.
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公开(公告)号:US20210273400A1
公开(公告)日:2021-09-02
申请号:US17277032
申请日:2019-08-09
Applicant: OSRAM OLED GmbH
Inventor: Bruno Jentzsch , Alexander Behres , Hans-Jürgen Lugauer
Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device.
Furthermore, a method for producing such a phase-coupled laser device is provided.-
公开(公告)号:US20210320006A1
公开(公告)日:2021-10-14
申请号:US17267307
申请日:2019-08-09
Applicant: OSRAM OLED GmbH
Inventor: Martin Behringer , Alexander Behres , Asako Hirai
IPC: H01L21/02 , H01L21/683 , H01L23/00
Abstract: A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is Inx1Aly1Ga(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.
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公开(公告)号:US20210280748A1
公开(公告)日:2021-09-09
申请号:US17265475
申请日:2019-08-02
Applicant: OSRAM OLED GmbH
Inventor: Sebastian Taeger , Siegfried Herrmann , Adrian Stefan Avramescu , Alexander Behres
Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.
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公开(公告)号:US11923656B2
公开(公告)日:2024-03-05
申请号:US17277032
申请日:2019-08-09
Applicant: OSRAM OLED GmbH
Inventor: Bruno Jentzsch , Alexander Behres , Hans-Jürgen Lugauer
CPC classification number: H01S5/026 , H01S5/04256 , H01S5/0624 , H01S5/423
Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device.
Furthermore, a method for producing such a phase-coupled laser device is provided.-
7.
公开(公告)号:US20200343420A1
公开(公告)日:2020-10-29
申请号:US16769586
申请日:2018-12-06
Applicant: Osram Oled GmbH
Inventor: Adrian Stefan Avramescu , Siegfried Herrmann , Alexander Behres
Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.
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