公开(公告)号：US11545369B2

公开(公告)日：2023-01-03

申请号：US17361435

申请日：2021-06-29

Applicant: OSRAM OLED GmbH

Inventor： Mathias Wendt ,  Andreas Weimar

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00 ,  H01L21/60

Abstract: An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

公开(公告)号：US20210327725A1

公开(公告)日：2021-10-21

申请号：US17361435

申请日：2021-06-29

Applicant: OSRAM OLED GmbH

Inventor： Mathias Wendt ,  Andreas Weimar

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00

Abstract: An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

公开(公告)号：US11094559B2

公开(公告)日：2021-08-17

申请号：US16604252

申请日：2018-04-18

Applicant: OSRAM OLED GmbH

Inventor： Mathias Wendt ,  Andreas Weimar

IPC: H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00 ,  H01L21/60

Abstract: A method of attaching a semiconductor chip on a lead frame includes A) providing a semiconductor chip, B) applying a solder metal layer sequence to the semiconductor chip, wherein the solder metal layer sequence includes a first metallic layer including indium or an indium-tin alloy, C) providing a lead frame, D) applying a metallization layer sequence to the lead frame, wherein the metallization layer sequence includes a fourth layer including indium and/or tin arranged above the lead frame and a third layer including gold arranged above the fourth layer, E) forming an intermetallic intermediate layer including gold and indium, gold and tin or gold, tin and indium, G) applying the semiconductor chip to the lead frame via the solder metal layer sequence and the intermetallic intermediate layer, and H) heating the arrangement produced in G) to attach the semiconductor chip to the lead frame.