-
公开(公告)号：US11631787B2
公开(公告)日：2023-04-18
申请号：US16980910
申请日：2019-03-14
Applicant: OSRAM OLED GmbH
Inventor： Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
-
公开(公告)号：US20220384689A1
公开(公告)日：2022-12-01
申请号：US17863608
申请日：2022-07-13
Applicant: OSRAM OLED GmbH
Inventor： Anna Strozecka-Assig , Johannes Saric
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.
-
3.发明授权公开(公告)号：US12255268B2
公开(公告)日：2025-03-18
申请号：US18619924
申请日：2024-03-28
Applicant: OSRAM OLED GmbH
Inventor： Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
-
4.发明授权公开(公告)号：US12015107B2
公开(公告)日：2024-06-18
申请号：US18180992
申请日：2023-03-09
Applicant: OSRAM OLED GmbH
Inventor： Sebastian Pickel , Johannes Saric , Wolfgang Schmid , Anna Strozecka-Assig , Johannes Baur
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
-
5.发明申请公开(公告)号：US20210320223A1
公开(公告)日：2021-10-14
申请号：US17267575
申请日：2019-08-13
Applicant: OSRAM OLED GmbH
Inventor： Sebastian Pickel , Katharina Werner , Bernd Böhm , Anna Strozecka-Assig , Anna Nirschl
Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.
-
Patent Agency Ranking
公开(公告)号：US20240204138A1
公开(公告)日：2024-06-20
申请号：US18589833
申请日：2024-02-28
Applicant: OSRAM OLED GmbH
Inventor： Anna Strozecka-Assig , Johannes Saric
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror includes a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.
-
公开(公告)号：US20230387354A1
公开(公告)日：2023-11-30
申请号：US18447631
申请日：2023-08-10
Applicant: OSRAM OLED GmbH
Inventor： Anna Strozecka-Assig , Johannes Saric
CPC classification number: H01L33/38 , H01L33/405 , H01L33/46 , H01L33/42 , H01L33/387 , H01L33/30
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.
-
公开(公告)号：US11799058B2
公开(公告)日：2023-10-24
申请号：US17863608
申请日：2022-07-13
Applicant: OSRAM OLED GmbH
Inventor： Anna Strozecka-Assig , Johannes Saric
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.
-
9.发明授权公开(公告)号：US12159956B2
公开(公告)日：2024-12-03
申请号：US17267575
申请日：2019-08-13
Applicant: OSRAM OLED GmbH
Inventor： Sebastian Pickel , Katharina Werner , Bernd Böhm , Anna Strozecka-Assig , Anna Nirschl
Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.
-
公开(公告)号：US20240204139A1
公开(公告)日：2024-06-20
申请号：US18589885
申请日：2024-02-28
Applicant: OSRAM OLED GmbH
Inventor： Anna Strozecka-Assig , Johannes Saric
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror includes a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.023 seconds)
