公开(公告)号：US11598667B2

公开(公告)日：2023-03-07

申请号：US17277993

申请日：2019-09-18

Applicant: OSRAM OLED GmbH

Inventor： Christian Leirer ,  Christian Mueller ,  Ulrich Steegmüller

IPC: G01J3/02 ,  G01J3/10 ,  G01J3/28 ,  G01J3/42 ,  G01N21/31

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

公开(公告)号：US20210348967A1

公开(公告)日：2021-11-11

申请号：US17277993

申请日：2019-09-18

Applicant: OSRAM OLED GmbH

Inventor： Christian Leirer ,  Christian Mueller ,  Ulrich Steegmüller

IPC: G01J3/02 ,  G01J3/10 ,  G01J3/28 ,  G01J3/42 ,  G01N21/31

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

公开(公告)号：US11916166B2

公开(公告)日：2024-02-27

申请号：US17053805

申请日：2019-05-08

Applicant: Osram OLED GmbH

Inventor： Roland Heinrich Enzmann ,  Christian Mueller ,  Stefan Barthel ,  Vanessa Eichinger ,  Marc Christian Nenstiel ,  Lorenzo Zini

IPC: H01L33/14 ,  H01L25/16 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L33/64

CPC classification number: H01L33/14 ,  H01L25/167 ,  H01L33/005 ,  H01L33/382 ,  H01L33/62 ,  H01L33/642 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.

公开(公告)号：US20210028223A1

公开(公告)日：2021-01-28

申请号：US17040084

申请日：2019-03-22

Applicant: Osram OLED GmbH

Inventor： Christian Mueller ,  Dominik Scholz ,  Joachim Hertkorn

IPC: H01L27/15

Abstract: An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.