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公开(公告)号:US11848406B2
公开(公告)日:2023-12-19
申请号:US17685058
申请日:2022-03-02
Applicant: OSRAM OLED GmbH
Inventor: Roland Heinrich Enzmann , Hubert Halbritter , Martin Rudolf Behringer
CPC classification number: H01L33/58 , H01L33/0095 , H01L33/46 , H01L33/62 , H01L2933/0058
Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection.
Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.-
公开(公告)号:US11749967B2
公开(公告)日:2023-09-05
申请号:US17645653
申请日:2021-12-22
Applicant: OSRAM OLED GmbH
Inventor: Frank Singer , Hubert Halbritter
IPC: H01S5/00 , H01S5/183 , H01S5/42 , H01S5/0225
CPC classification number: H01S5/18386 , H01S5/0225 , H01S5/18388 , H01S5/18391 , H01S5/423 , H01S2301/176
Abstract: In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.
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公开(公告)号:US11735682B2
公开(公告)日:2023-08-22
申请号:US16754612
申请日:2018-10-16
Applicant: OSRAM OLED GmbH
Inventor: Tilman Ruegheimer , Hubert Halbritter
CPC classification number: H01L31/173 , G01S7/4815 , G01S17/04 , H01L25/167 , A61B5/02427 , G06F3/017
Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.
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公开(公告)号:US11501681B2
公开(公告)日:2022-11-15
申请号:US17251072
申请日:2019-05-24
Applicant: OSRAM OLED GmbH
Inventor: Tilman Rügheimer , Hubert Halbritter
Abstract: In an embodiment an arrangement includes a plurality of pixels, wherein each pixel includes at least two subpixels of each color, wherein each color is defined by a predefined target color location, wherein each subpixel comprises an optoelectronic component defined by a color location, wherein the color locations of the optoelectronic components of each color is chosen such that during operation of the optoelectronic components the predefined target color location is met for each color, wherein the optoelectronic components for each color are of identical design, and a controller configured to commonly control the optoelectronic components of a color.
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公开(公告)号:US11361983B2
公开(公告)日:2022-06-14
申请号:US16977823
申请日:2019-03-04
Applicant: Osram Oled GmbH
Inventor: Hubert Halbritter
IPC: H01L21/683 , B41F16/00 , H01L25/16 , H01L31/02 , H01L31/0216 , H01L31/0232 , H01L31/173 , H01L31/18
Abstract: A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.
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公开(公告)号:US11202058B2
公开(公告)日:2021-12-14
申请号:US16120094
申请日:2018-08-31
Applicant: OSRAM OLED GMBH
Inventor: Peter Brick , Hubert Halbritter , Mikko Peraelae , Frank Singer
IPC: H04N13/302 , H04N13/351 , H04N13/305 , G02B30/27 , H04N13/327
Abstract: A 3D display element (2) comprising a plurality of emission regions (20) adapted to emit electromagnetic radiation (L), wherein at least some emission regions (20) are associated with a first group and at least some emission regions (20) are associated with a second group (21, 22), wherein by means of the emission regions (20) of the first group (21) respectively a pixel (100) of a first perspective (11) of an image (B) can be represented, and by means of the emission regions (20) of the second group (22) respectively a pixel (100) of a second perspective (12) of the image (B) can be represented the sum of all emission regions (20) is greater than the sum of all pixels (100) of all perspectives (11, 12).
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公开(公告)号:US11189990B2
公开(公告)日:2021-11-30
申请号:US16615452
申请日:2018-05-18
Applicant: OSRAM OLED GmbH
Inventor: Andreas Wojcik , Hubert Halbritter , Thomas Schwarz
IPC: H01S5/0231 , H01S5/0234 , H01S5/02234 , H01S5/0232 , H01S5/0236 , H01S5/0233 , H01L23/00 , H01S5/042 , H01S5/02345 , H01S5/028
Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.
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公开(公告)号:US20210223559A1
公开(公告)日:2021-07-22
申请号:US17219943
申请日:2021-04-01
Applicant: OSRAM OLED GmbH
Inventor: Roland Enzmann , Hubert Halbritter , Markus Arzberger , Andreas Ploessl , Roland Schulz , Georg Rossbach , Bernd Boehm , Frank Singer , Matthias Sabathil
Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.
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公开(公告)号:US12176678B2
公开(公告)日:2024-12-24
申请号:US16772709
申请日:2018-11-29
Applicant: OSRAM OLED GmbH
Inventor: Roland Heinrich Enzmann , Hubert Halbritter , Michael Klein
Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.
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公开(公告)号:US11552449B2
公开(公告)日:2023-01-10
申请号:US17331715
申请日:2021-05-27
Applicant: OSRAM OLED GmbH
Inventor: Andreas Fröhlich , Hubert Halbritter , Josip Maric
IPC: H01S3/00 , H01S5/026 , H01S5/042 , H01S5/068 , H01S5/02345 , H01S5/0236 , H01S5/062 , H01S5/0237
Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.
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