Semiconductor device
    3.
    发明授权

    公开(公告)号:US11735682B2

    公开(公告)日:2023-08-22

    申请号:US16754612

    申请日:2018-10-16

    Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

    Arrangement for a display and method

    公开(公告)号:US11501681B2

    公开(公告)日:2022-11-15

    申请号:US17251072

    申请日:2019-05-24

    Abstract: In an embodiment an arrangement includes a plurality of pixels, wherein each pixel includes at least two subpixels of each color, wherein each color is defined by a predefined target color location, wherein each subpixel comprises an optoelectronic component defined by a color location, wherein the color locations of the optoelectronic components of each color is chosen such that during operation of the optoelectronic components the predefined target color location is met for each color, wherein the optoelectronic components for each color are of identical design, and a controller configured to commonly control the optoelectronic components of a color.

    Method for producing a semiconductor device and semiconductor device

    公开(公告)号:US11361983B2

    公开(公告)日:2022-06-14

    申请号:US16977823

    申请日:2019-03-04

    Abstract: A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.

    Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range

    公开(公告)号:US12176678B2

    公开(公告)日:2024-12-24

    申请号:US16772709

    申请日:2018-11-29

    Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.

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