公开(公告)号：US20210036200A1

公开(公告)日：2021-02-04

申请号：US16964533

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Simeon Katz ,  Markus Maute

IPC: H01L33/62 ,  H01L31/18 ,  H01L31/02 ,  H01L23/00 ,  H01L33/44 ,  H01L31/0216

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.

公开(公告)号：US11239402B2

公开(公告)日：2022-02-01

申请号：US16964533

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Simeon Katz ,  Markus Maute

IPC: H01L33/62 ,  H01L23/00 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216 ,  H01L33/44 ,  H01L33/48 ,  H01L25/075

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.