公开(公告)号：US12080995B2

公开(公告)日：2024-09-03

申请号：US17263786

申请日：2019-07-30

Applicant: OSRAM OLED GmbH

Inventor： Peter Jander ,  Michael Roth ,  Tomasz Swietlik ,  Clemens Vierheilig

IPC: H01S5/06 ,  H01S5/024 ,  H01S5/026 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/0612 ,  H01S5/02453 ,  H01S5/0261 ,  H01S5/22 ,  H01S5/323

Abstract: A laser diode chip is described, comprising including:



an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,
at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and
at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.