公开(公告)号：US11644538B2

公开(公告)日：2023-05-09

申请号：US16626480

申请日：2018-06-28

Applicant: OSRAM OLED GmbH

Inventor： Michael Schumann ,  Dominik Schulten ,  Dominik Scholz

IPC: G01S7/481 ,  G01S7/484 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89

CPC classification number: G01S7/4815 ,  G01S7/484 ,  G01S7/4816 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89

Abstract: An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

公开(公告)号：US11280454B2

公开(公告)日：2022-03-22

申请号：US17260942

申请日：2019-08-07

Applicant: OSRAM OLED GmbH

Inventor： Klaus Flock ,  Michael Schumann ,  Moritz Laubscher

IPC: F21L4/00 ,  H01L25/075 ,  H01L33/38 ,  H01L33/44 ,  H01L33/50 ,  F21V23/00 ,  C09K11/77 ,  F21Y113/13 ,  F21Y115/10

Abstract: In one embodiment, the optoelectronic semiconductor device comprises a carrier having electrical connection surfaces on a carrier upper side. At least four semiconductor chips are configured to emit light of different colors from each other. The semiconductor chips are mounted close to each other on the connection surfaces so that a distance between adjacent semiconductor chips is at most 100 μm in a top view on the carrier upper side.

公开(公告)号：US20200158870A1

公开(公告)日：2020-05-21

申请号：US16626480

申请日：2018-06-28

Applicant: OSRAM OLED GmbH

Inventor： Michael Schumann ,  Dominik Schulten ,  Dominik Scholz

IPC: G01S17/10 ,  G01S7/484 ,  G01S7/4863 ,  G01S7/481

Abstract: An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

公开(公告)号：US12068281B2

公开(公告)日：2024-08-20

申请号：US17261505

申请日：2019-08-07

Applicant: OSRAM OLED GMBH

Inventor： Christian Leirer ,  Michael Schumann

IPC: H01L25/065 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L25/0657 ,  H01L25/167 ,  H01L33/005 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0066

Abstract: In an embodiment, the semiconductor device is surface mountable and comprises a light emitting semiconductor chip which comprises electrical contact pads. An opaque base body laterally surrounds the semiconductor chip. An electrical fanning layer contains electrical conductor tracks. Electrical connection pads are used for external electrical contacting of the semiconductor device. The contact pads and the connection pads are located on different sides of the fanning layer. The contact pads are electrically connected to the associated connection pads by means of the fanning layer. The connection pads are expanded relative to the contact pads.

公开(公告)号：US11538964B2

公开(公告)日：2022-12-27

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/38 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

公开(公告)号：US20200243728A1

公开(公告)日：2020-07-30

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L33/38 ,  H01L27/15 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.