公开(公告)号：US20190227731A1

公开(公告)日：2019-07-25

申请号：US15940991

申请日：2018-03-30

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu ,  Cheng-Yi Lin ,  Bo-Cheng Ko

IPC: G06F3/06 ,  G06F7/08 ,  G06F12/10

Abstract: A memory management method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory management method includes: recording sorting information corresponding to a plurality of first physical units of the rewritable non-volatile memory module according to a data storage status of the first physical units; receiving at least one command, and the command is configured to change the data storage status of the first physical units; updating the sorting information according to the command; and copying data stored in at least one physical unit among the first physical units to at least one second physical unit of the rewritable non-volatile memory module according to the updated sorting information.

公开(公告)号：US09947412B1

公开(公告)日：2018-04-17

申请号：US15603427

申请日：2017-05-23

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C16/08 ,  G11C11/56

CPC classification number: G11C16/14 ,  G06F12/0246 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C2211/5644

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes recording a plurality of characteristic parameters corresponding to a plurality of data to be programmed; arranging the data according to the characteristic parameters and identifying frequently-read data among the plurality of data according to the characteristic parameters, and programming the frequently-read data into a first physical programming unit of a rewritable non-volatile memory module, wherein a time for reading data from the first physical programming unit is less than a time for reading data from a second physical programming unit of the rewritable non-volatile memory module. Accordingly, the reading performance for the data can be effectively improved.

公开(公告)号：US20170147216A1

公开(公告)日：2017-05-25

申请号：US15000021

申请日：2016-01-18

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F3/06

CPC classification number: G06F3/0604 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7205

Abstract: A method and a system for memory management and a memory storage device thereof are provided. The memory storage device includes a rewritable non-volatile memory module. The method includes receiving a command from a host system; reading use information from the rewritable non-volatile memory module according to the command; writing the use information into a first physical erasing unit of the rewritable non-volatile memory module, and marking the first physical erasing unit with a recognizing flag. The method also includes erasing data in at least part of physical erasing units excepting the first physical erasing unit in the rewritable non-volatile memory module according to the recognizing flag; and establishing a memory management table according to the use information stored in the first physical erasing unit for operating the memory storage device.

公开(公告)号：US20220164133A1

公开(公告)日：2022-05-26

申请号：US17118605

申请日：2020-12-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu ,  Yi-Tein Hung

IPC: G06F3/06

Abstract: A memory control method is disclosed according to an embodiment. The method includes: temporarily storing first type data into a buffer memory, wherein the first type data is preset to be stored into a rewritable non-volatile memory module based on a first programming mode; in a state that the first type data is stored in the buffer memory, temporarily storing second type data into the buffer memory, and the second type data is preset to be stored into the rewritable non-volatile memory module based on a second programming mode different from the first programming mode; and in a state that a data volume of the first type data in the buffer memory does not reach a first threshold, if a data volume of the second type data in the buffer memory reaches a second threshold, storing the first type data in the buffer memory into the rewritable non-volatile memory module.

公开(公告)号：US09940021B2

公开(公告)日：2018-04-10

申请号：US15000021

申请日：2016-01-18

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/0604 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7205

Abstract: A method and a system for memory management and a memory storage device thereof are provided. The memory storage device includes a rewritable non-volatile memory module. The method includes receiving a command from a host system; reading use information from the rewritable non-volatile memory module according to the command; writing the use information into a first physical erasing unit of the rewritable non-volatile memory module, and marking the first physical erasing unit with a recognizing flag. The method also includes erasing data in at least part of physical erasing units excepting the first physical erasing unit in the rewritable non-volatile memory module according to the recognizing flag; and establishing a memory management table according to the use information stored in the first physical erasing unit for operating the memory storage device.

公开(公告)号：US11216217B2

公开(公告)日：2022-01-04

申请号：US16847689

申请日：2020-04-14

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F13/00 ,  G06F3/06 ,  G06F21/79 ,  G06F11/10

Abstract: A data transfer method includes: instructing a first memory storage device to disable a data encryption function activated by default; and sending a write command to the first memory storage device under a status that the data encryption function of the first memory storage device is disabled. The write command instructs a storing of encryption information of encrypted data to the first memory storage device. The encryption information is not generated by the first memory storage device and is unreadable by a normal read command.

公开(公告)号：US10289546B2

公开(公告)日：2019-05-14

申请号：US15611789

申请日：2017-06-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F3/06 ,  G06F12/02

Abstract: A memory management method for a rewritable non-volatile memory module having a plurality of physical erasing units is provided. The method includes providing a sequence corresponding to at least part of the physical erasing units; adjusting the sequence by arranging a first physical erasing unit to a first end of the sequence based on an updating time corresponding to the first physical erasing unit; searching the at least part of the physical erasing units based on a searching order for finding at least one second physical erasing unit that meets a data condition, and the searching order indicates an order from a second end of the sequence to the first end of the sequence; and moving valid data stored in the at least one second physical erasing unit. Accordingly, efficiency of the garbage collection operation can be improved.

公开(公告)号：US20180300235A1

公开(公告)日：2018-10-18

申请号：US15611789

申请日：2017-06-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F12/02 ,  G06F3/06

CPC classification number: G06F12/0246 ,  G06F3/0608 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0688 ,  G06F2212/2022 ,  G06F2212/7205

Abstract: A memory management method for a rewritable non-volatile memory module having a plurality of physical erasing units is provided. The method includes providing a sequence corresponding to at least part of the physical erasing units; adjusting the sequence by arranging a first physical erasing unit to a first end of the sequence based on an updating time corresponding to the first physical erasing unit; searching the at least part of the physical erasing units based on a searching order for finding at least one second physical erasing unit that meets a data condition, and the searching order indicates an order from a second end of the sequence to the first end of the sequence; and moving valid data stored in the at least one second physical erasing unit. Accordingly, efficiency of the garbage collection operation can be improved.

公开(公告)号：US10025708B1

公开(公告)日：2018-07-17

申请号：US15805148

申请日：2017-11-07

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu

IPC: G06F12/02 ,  G06F3/06 ,  G11C16/16

Abstract: A memory management method, and a memory control circuit unit and a memory storage apparatus using this method are provided. The method includes performing a first garbage collection operation corresponding to a data area if the number of physical erasing units associated with the data area is larger than a first threshold; performing a second garbage collection operation corresponding to a table area if the number of physical erasing units associated with the table area is larger than a second threshold; and dynamically adjusting the second threshold according to the number of the physical erasing units associated with the data area.

公开(公告)号：US11960761B2

公开(公告)日：2024-04-16

申请号：US17118605

申请日：2020-12-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chun-Yang Hu ,  Yi-Tein Hung

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0619 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: A memory control method is disclosed according to an embodiment. The method includes: temporarily storing first type data into a buffer memory, wherein the first type data is preset to be stored into a rewritable non-volatile memory module based on a first programming mode; in a state that the first type data is stored in the buffer memory, temporarily storing second type data into the buffer memory, and the second type data is preset to be stored into the rewritable non-volatile memory module based on a second programming mode different from the first programming mode; and in a state that a data volume of the first type data in the buffer memory does not reach a first threshold, if a data volume of the second type data in the buffer memory reaches a second threshold, storing the first type data in the buffer memory into the rewritable non-volatile memory module.