Substrate Treating Apparatus and Method
    1.
    发明申请
    Substrate Treating Apparatus and Method 审中-公开
    基板处理装置及方法

    公开(公告)号:US20150136734A1

    公开(公告)日:2015-05-21

    申请号:US14541310

    申请日:2014-11-14

    Applicant: PSK Inc.

    CPC classification number: H01J37/32449 H01J37/321 H01J37/32357 H01J37/3244

    Abstract: Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. Plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate. Plasma generated from a second gas supplied from a second supplying unit by the second source is used for treating an edge area of the substrate. A gas separation member prevents plasmas generated respectively from first and second gases from being mixed up.

    Abstract translation: 提供了一种基板处理装置,其包括第一供给单元,第二供应单元,第一源,第二源,气体分离构件等。 由第一源从第一供应单元供应的第一气体产生的等离子体用于处理基板的中心区域。 使用由第二源从第二供给单元提供的第二气体产生的等离子体用于处理基板的边缘区域。 气体分离部件防止分别从第一和第二气体产生的等离子体混合。

    Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device
    2.
    发明授权
    Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device 有权
    等离子体发生装置及其控制方法,以及包括等离子体发生装置的基板处理装置

    公开(公告)号:US09536708B2

    公开(公告)日:2017-01-03

    申请号:US14227449

    申请日:2014-03-27

    Applicant: PSK INC.

    Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

    Abstract translation: 提供了一种等离子体产生装置。 等离子体产生装置包括:提供RF信号的RF电源; 等离子体室,其提供注入气体以产生等离子体的空间; 安装在等离子体室的一部分处的第一电磁感应器,并且在施加RF信号时引起等离子体室中的电磁场; 安装在等离子体室的另一部分处的第二电磁感应器,并且在施加RF信号时引起等离子体室中的电磁场; 连接到第一电磁感应器的第一负载; 连接到第二电磁感应器的第二负载; 以及控制器,其通过调整所述第一负载和所述第二负载的至少一个阻抗来控制提供给所述第一电磁感应器和所述第二电磁感应器的功率。

    Substrate treating apparatus, substrate treating method, and plasma generating unit

    公开(公告)号:US10109459B1

    公开(公告)日:2018-10-23

    申请号:US15683835

    申请日:2017-08-23

    Applicant: PSK INC.

    Abstract: Disclosed are a substrate treating The substrate treating apparatus includes a plasma generating unit the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through a first electric wire, a second antenna wound to surround the housing and connected to the power source through a second electric wire to be disposed in parallel to the first antenna, and power distributing members provided in the first antenna and the second antenna to distribute electric power supplied from the power source to the first antenna and the second antenna.

Patent Agency Ranking