公开(公告)号：US11862434B2

公开(公告)日：2024-01-02

申请号：US17117720

申请日：2020-12-10

Applicant: PSK INC.

Inventor： Young Jae Ma ,  Sung Jin Yoon ,  Hyo Jeong Seo ,  Jong Woo Park

IPC: H01J37/32 ,  C23C4/04

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J37/3222 ,  C23C4/04

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

公开(公告)号：US10109459B1

公开(公告)日：2018-10-23

申请号：US15683835

申请日：2017-08-23

Applicant: PSK INC.

Inventor： Han Saem Rhee ,  Sung Jin Yoon ,  Dong Hoon Kim

IPC: H01J37/32

Abstract: Disclosed are a substrate treating The substrate treating apparatus includes a plasma generating unit the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through a first electric wire, a second antenna wound to surround the housing and connected to the power source through a second electric wire to be disposed in parallel to the first antenna, and power distributing members provided in the first antenna and the second antenna to distribute electric power supplied from the power source to the first antenna and the second antenna.

公开(公告)号：US20230207262A1

公开(公告)日：2023-06-29

申请号：US17710269

申请日：2022-03-31

Applicant: PSK INC.

Inventor： Jong Woo Park ,  Sung Jin Yoon ,  A Ram Kim ,  Soo Yeong Yang ,  Ji Seung Kim ,  Yu Jin Jang

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32651 ,  H01J37/32522 ,  H01J2237/327

Abstract: A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.