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1.发明授权System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy 有权通过优化电磁能吸收来加热半导体晶片的系统和工艺公开(公告)号：US08669496B2
公开(公告)日：2014-03-11
申请号：US13524931
申请日：2012-06-15
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: H01L21/67115 , C23C16/481 , C30B25/105 , C30B31/12 , F27B17/0025 , G02B5/124
Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。
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公开(公告)号：US20120201271A1
公开(公告)日：2012-08-09
申请号：US13447920
申请日：2012-04-16
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
IPC: G01K11/00
CPC classification number: G01K15/00 , G01J5/0007 , G01J5/0806 , G01J5/0831 , G01J5/0846 , G01K11/125
Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.
Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。
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公开(公告)号：US08157439B2
公开(公告)日：2012-04-17
申请号：US12480400
申请日：2009-06-08
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: G01K15/00 , G01J5/0007 , G01J5/0806 , G01J5/0831 , G01J5/0846 , G01K11/125
Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.
Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。
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4.发明授权Method and system for determining optical properties of semiconductor wafers 有权用于确定半导体晶片的光学性质的方法和系统公开(公告)号：US08152365B2
公开(公告)日：2012-04-10
申请号：US11478342
申请日：2006-06-29
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: H01L21/67115 , G01J5/0003 , G01N21/55 , H01L21/67248 , H01L22/24
Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.
Abstract translation: 公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。 一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。 例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。 根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。 在晶片处理过程中，发射率可用于使用高温计校正温度测量。 除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。
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5.发明授权System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy 有权通过优化电磁能吸收来加热半导体晶片的系统和工艺公开(公告)号：US07453051B2
公开(公告)日：2008-11-18
申请号：US11370095
申请日：2006-03-07
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: H01L21/67115 , C23C16/481 , C30B25/105 , C30B31/12 , F27B17/0025 , G02B5/124
Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。
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Patent Agency Ranking
公开(公告)号：US08668383B2
公开(公告)日：2014-03-11
申请号：US13447920
申请日：2012-04-16
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: G01K15/00 , G01J5/0007 , G01J5/0806 , G01J5/0831 , G01J5/0846 , G01K11/125
Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.
Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。
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公开(公告)号：US08575521B2
公开(公告)日：2013-11-05
申请号：US12060652
申请日：2008-04-01
Applicant: Zsolt Nenyei , Paul Janis Timans
Inventor： Zsolt Nenyei , Paul Janis Timans
IPC: A21B1/00
CPC classification number: G05D23/27 , H01L21/324 , H01L21/67115 , H01L21/67253 , H01L22/26
Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.
Abstract translation: 通过考虑与正在处理的晶片（或其他半导体物体）不同的一个或多个证人结构，可以提高RTP系统中的温度控制。 例如，RTP加热系统和见证结构之间的功率耦合可用于调整由RTP系统用于控制晶片加热的一个或多个控制参数，例如模型定义。 作为另一个示例，期望的见证结构温度或其他属性的存储的轨迹可以用作处理循环期间的控制的基础。 因此，当晶片被加热“开环”时，证人结构可以被控制为“闭环”。 作为另一个例子，可以使用RTP加热系统和证人结构之间的热通量来确定来自加热系统的辐射能量，该加热系统是入射到见证结构上的。 可以基于该入射能量进行一个或多个控制动作。
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8.发明授权公开(公告)号：US08296091B2
公开(公告)日：2012-10-23
申请号：US13109577
申请日：2011-05-17
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
IPC: G01J5/02
CPC classification number: G01J5/0896 , G01J5/0003 , G01J5/0007 , G01J5/0285 , G01J5/06 , G01J5/08 , G01J5/0803 , G01J5/0821 , G01J5/0831 , G01J5/0846 , G01J5/089 , G01J5/522 , G01J5/58 , G01J2005/0048 , G01J2005/065 , H01L21/324 , H01L21/67115 , H01L21/67248
Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.
Abstract translation: 公开了一种在热处理室中校准温度测量装置，例如高温计的方法和系统。 根据本发明，该系统包括将光能发射到包含在热处理室中的基板上的校准光源。 然后光检测器检测正在透过基板的光量。 然后使用检测到的光能量来校准在系统中使用的温度测量装置。
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9.发明申请System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy 有权通过优化电磁能吸收来加热半导体晶片的系统和工艺公开(公告)号：US20120252229A1
公开(公告)日：2012-10-04
申请号：US13524931
申请日：2012-06-15
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
IPC: H01L21/268 , H01L21/263
CPC classification number: H01L21/67115 , C23C16/481 , C30B25/105 , C30B31/12 , F27B17/0025 , G02B5/124
Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。
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10.发明授权System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy 有权通过优化电磁能吸收来加热半导体晶片的系统和工艺公开(公告)号：US07847218B2
公开(公告)日：2010-12-07
申请号：US11931452
申请日：2007-10-31
Applicant: Paul Janis Timans
Inventor： Paul Janis Timans
CPC classification number: H01L21/67115 , C23C16/481 , C30B25/105 , C30B31/12 , F27B17/0025 , G02B5/124
Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。
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