公开(公告)号：US12021171B2

公开(公告)日：2024-06-25

申请号：US17211845

申请日：2021-03-25

Applicant: PlayNitride Display Co., Ltd.

Inventor： Tzu-Yang Lin ,  Yen-Chun Tseng ,  Yun-Syuan Chou ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Jian-Zhi Chen

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L27/156 ,  H01L33/62

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

公开(公告)号：US20240097067A1

公开(公告)日：2024-03-21

申请号：US18527387

申请日：2023-12-04

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

公开(公告)号：US20230343897A1

公开(公告)日：2023-10-26

申请号：US17748049

申请日：2022-05-19

Applicant: PlayNitride Display Co., Ltd.

Inventor： You-Lin Peng ,  Wan-Jung Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/62

Abstract: A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

公开(公告)号：US11705441B2

公开(公告)日：2023-07-18

申请号：US17359679

申请日：2021-06-28

Applicant: PlayNitride Display Co., Ltd.

Inventor： Sheng-Yuan Sun ,  Ying-Tsang Liu ,  Yi-Ching Chen ,  Pei-Hsin Chen ,  Yi-Chun Shih ,  Tzu-Yang Lin ,  Yu-Hung Lai

IPC: H01L25/075 ,  H01L27/15

CPC classification number: H01L25/0753 ,  H01L25/075 ,  H01L27/153 ,  H01L27/156

Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.

公开(公告)号：US11387387B2

公开(公告)日：2022-07-12

申请号：US16862582

申请日：2020-04-30

Applicant: PlayNitride Display Co., Ltd.

Inventor： Chih-Ling Wu ,  Yen-Yeh Chen ,  Yi-Min Su ,  Yi-Chun Shih ,  Bo-Wei Wu ,  Yu-Yun Lo ,  Ying-Ting Lin ,  Tzu-Yang Lin

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/40

Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

公开(公告)号：US11094677B2

公开(公告)日：2021-08-17

申请号：US16677672

申请日：2019-11-08

Applicant: PlayNitride Display Co., Ltd.

Inventor： Sheng-Yuan Sun ,  Ying-Tsang Liu ,  Yi-Ching Chen ,  Pei-Hsin Chen ,  Yi-Chun Shih ,  Tzu-Yang Lin ,  Yu-Hung Lai

IPC: H01L25/075 ,  H01L27/15

Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.

公开(公告)号：US10937826B2

公开(公告)日：2021-03-02

申请号：US16436333

申请日：2019-06-10

Applicant: PlayNitride Display Co., Ltd.

Inventor： Ying-Tsang Liu ,  Pei-Hsin Chen ,  Yi-Chun Shih ,  Yi-Ching Chen ,  Yu-Chu Li ,  Huan-Pu Chang ,  Tzu-Yang Lin ,  Yu-Hung Lai

IPC: H01L27/15 ,  H01L33/36

Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.

公开(公告)号：US20200176509A1

公开(公告)日：2020-06-04

申请号：US16436333

申请日：2019-06-10

Applicant: PlayNitride Display Co., Ltd.

Inventor： Ying-Tsang Liu ,  Pei-Hsin Chen ,  Yi-Chun Shih ,  Yi-Ching Chen ,  Yu-Chu Li ,  Huan-Pu Chang ,  Tzu-Yang Lin ,  Yu-Hung Lai

IPC: H01L27/15 ,  H01L33/36

Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.

公开(公告)号：US12132144B2

公开(公告)日：2024-10-29

申请号：US18527387

申请日：2023-12-04

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/62 ,  G09G3/32

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

公开(公告)号：US11901479B2

公开(公告)日：2024-02-13

申请号：US17325179

申请日：2021-05-19

Applicant: PlayNitride Display Co., Ltd.

Inventor： Bo-Wei Wu ,  Yu-Yun Lo ,  Chien-Chen Kuo ,  Chang-Feng Tsai ,  Tzu-Yang Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L21/66 ,  H01L21/683 ,  H01L33/62 ,  G09G3/32

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  G09G3/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.