公开(公告)号：US10141436B2

公开(公告)日：2018-11-27

申请号：US15479247

申请日：2017-04-04

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/768 ,  H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10

Abstract: A tunnel field effect transistor (TFET) includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

公开(公告)号：US11093667B2

公开(公告)日：2021-08-17

申请号：US15986337

申请日：2018-05-22

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Gerhard Klimeck ,  Tillmann Kubis ,  Junzhe Geng

IPC: G06F30/20 ,  H01L33/00 ,  H01L33/06 ,  G06F30/367 ,  H01L33/14 ,  G06F111/10

Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.

公开(公告)号：US10680088B2

公开(公告)日：2020-06-09

申请号：US16201960

申请日：2018-11-27

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

公开(公告)号：US20180121583A1

公开(公告)日：2018-05-03

申请号：US15859610

申请日：2017-12-31

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann C. Kubis ,  Ganesh Hegde

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model

公开(公告)号：US12050844B2

公开(公告)日：2024-07-30

申请号：US17369255

申请日：2021-07-07

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Tillmann Kubis ,  Junzhe Geng

IPC: G06F30/20 ,  G06F30/367 ,  H01L33/00 ,  H01L33/06 ,  G06F111/10 ,  H01L33/14

CPC classification number: G06F30/20 ,  G06F30/367 ,  H01L33/0025 ,  H01L33/06 ,  G06F2111/10 ,  H01L33/145

Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.

公开(公告)号：US20210334438A1

公开(公告)日：2021-10-28

申请号：US17369255

申请日：2021-07-07

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Tillmann Kubis ,  Junzhe Geng

IPC: G06F30/20 ,  H01L33/00 ,  H01L33/06 ,  G06F30/367

Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.

公开(公告)号：US20200027974A1

公开(公告)日：2020-01-23

申请号：US16201960

申请日：2018-11-27

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

公开(公告)号：US20180373826A1

公开(公告)日：2018-12-27

申请号：US16115459

申请日：2018-08-28

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann C Kubis ,  Ganesh Hegde

IPC: G06F17/50

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model

公开(公告)号：US10311179B2

公开(公告)日：2019-06-04

申请号：US16115459

申请日：2018-08-28

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann C Kubis ,  Ganesh Hegde

IPC: G06F17/50

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

公开(公告)号：US20180336302A1

公开(公告)日：2018-11-22

申请号：US15986337

申请日：2018-05-22

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Gerhard Klimeck ,  Tillmann Kubis ,  Junzhe Geng

IPC: G06F17/50 ,  H01L33/00

Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.