公开(公告)号：US09778194B2

公开(公告)日：2017-10-03

申请号：US14800088

申请日：2015-07-15

Applicant: Purdue Research Foundation

Inventor： Vikas Tomar ,  Ming Gan

IPC: G01J3/44 ,  G01N21/65 ,  G01K13/00 ,  G01L1/24

CPC classification number: G01N21/65 ,  G01K13/00 ,  G01L1/24

Abstract: Embodiments of the present disclosure include separating a measured Raman shift signal into mechanical and thermal components when a uniaxial compressive load is applied in situ. In some embodiments, in situ uniaxial compressive loads are applied on examined specimens from room temperature to 150° C. In alternate embodiments, Raman shift measurements are performed as a function of strain at constant temperature and/or as a function of temperature at constant strain levels. It was realized that the Raman shift measured at a given temperature under a given level of applied stress can be expressed as a summation of stress-induced Raman shift signal and temperature-induced Raman shift signal measured separately. Such a separation of Raman shift signal is utilized by various embodiments to measure localized change in thermal conductivity and/or mechanical stress of structures (e.g., semiconductor structures) under applied stress.

公开(公告)号：US20160018334A1

公开(公告)日：2016-01-21

申请号：US14800088

申请日：2015-07-15

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Vikas Tomar ,  Ming Gan

IPC: G01N21/65 ,  G01L1/24 ,  G01K13/00

CPC classification number: G01N21/65 ,  G01K13/00 ,  G01L1/24

Abstract: Embodiments of the present disclosure include separating a measured Raman shift signal into mechanical and thermal components when a uniaxial compressive load is applied in situ. In some embodiments, in situ uniaxial compressive loads are applied on examined specimens from room temperature to 150° C. In alternate embodiments, Raman shift measurements are performed as a function of strain at constant temperature and/or as a function of temperature at constant strain levels. It was realized that the Raman shift measured at a given temperature under a given level of applied stress can be expressed as a summation of stress-induced Raman shift signal and temperature-induced Raman shift signal measured separately. Such a separation of Raman shift signal is utilized by various embodiments to measure localized change in thermal conductivity and/or mechanical stress of structures (e.g., semiconductor structures) under applied stress.

Abstract translation: 本公开的实施例包括当原位施加单轴压缩载荷时将测量的拉曼移位信号分离成机械和热分量。 在一些实施例中，将原位单轴压缩载荷施加在从室温至150℃的检查样品上。在替代实施例中，拉曼位移测量作为恒定温度下的应变和/或恒定应变下的温度的函数进行 水平。 已经认识到，在给定的施加应力水平下在给定温度下测量的拉曼位移可以表示为单独测量的应力诱导拉曼位移信号和温度诱导拉曼移位信号的总和。 拉曼移位信号的这种分离被各种实施例用于测量施加的应力下的结构（例如，半导体结构）的热导率和/或机械应力的局部变化。